A kind of light-emitting diode epitaxial layer and preparation method thereof

Abstract

The invention provides a Light emitting diode (LED) epitaxial layer and a preparing method thereof. The method comprises the steps that a P type gallium nitride layer is grown with high temperature condition on the substrate to obtain good crystal quality and then a luminescent layer and an N type gallium nitride layer are grown. Among them, the N type gallium nitride layer is grown with the low temperature condition which has the same growing temperature as the temperature of the barrier layer in the growing luminescent layer, which avoids destroying the quality of the luminescent layer and affecting luminous efficiency.

Description

technical field [0001] The invention relates to the field of semiconductor preparation, in particular to an epitaxial layer of a light emitting diode and a preparation method thereof. Background technique [0002] GaN-based LEDs have extremely broad application prospects in image display, signal indication, lighting, and basic research due to their excellent characteristics such as long life, impact resistance, earthquake resistance, and energy saving, and have become one of the research hotspots in the field of gallium nitride. one. In most of the prior art, an unintentionally doped gallium nitride buffer layer is grown on the substrate, and the n-type gallium nitride layer, the light emitting layer and the p-type gallium nitride layer are continued to be grown after the surface of the buffer layer is flattened. In order to obtain a flat surface, the thickness of the unintentionally doped gallium nitride buffer layer and the n-type gallium nitride layer is often as thick a...

AI Technical Summary

Problems solved by technology

In order to obtain a flat surface, the thickness of the unintentionally doped gallium nitride buffer layer and the n-type gallium nitride layer is often about 2.5-3.5 μm, which greatly affects the growth efficiency of light-emitting diodes.

At the same time, in the prior art, the P-type GaN layer is grown on the light-emitting layer, so in order to avoid damage to the light-emitting layer under high temperature conditions, the P-type GaN layer cannot use a higher growth temperature, resulting in P-type The crystal quality of the gallium nitride layer is poor, and it is prone to electrical abnormalities

In addition, growing the P-type GaN layer after the growth of the light-emitting layer is also easy to cause impurities in the P-type GaN layer, usually Mg, to enter the light-emitting layer through diffusion, and on the one hand, destroy the crystal of the light-emitting layer. On the other hand, it is easy to cause non-radiative recombination, which affects the luminous efficiency of light-emitting diodes

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