Deducting and deduction testing methods for <60>Co Gamma-ray radiation response of SOI (silicon on insulator) NMOSFET (N-channel metal oxide semiconductor field-effect transistor)

Abstract

The invention provides deducting and deduction testing methods for <60>Co Gamma-ray radiation response of SOI (silicon on insulator) NMOSFET (N-channel metal oxide semiconductor field-effect transistor); in a very low electric field, two SOI NMOSFETs under same structure and process conditions are subjected to X-ray radiation and <60>Co Gamma-ray radiation respectively; ratios of threshold voltage drifts under X-ray radiation and <60>Co Gamma-ray radiation due to oxide layer trap charge are compared to extract a DEF (dose effect factor); radiation dose level of X-ray test data is multiplied by the DEF, threshold voltage drift value due to radiation is multiplied by the factor 0.7, and radiation response to <60>Co Gamma-ray is acquired accordingly; the methods have small application limits, Vth deduction is more accurate, mass radiation tests for <60>Co source can be omitted, testing cost is greatly reduced, the advantage of X-ray in facilitating and quickening the provision of feedback is given to full play, and research and development efficiency is improved.

Description

technical field [0001] The present invention relates to a SOI NMOSFET 60 Co gamma ray radiation response derivation and derivation test method, especially related to a SOI NMOSFET suitable for semiconductor components 60 Co gamma ray radiation response derivation and derivation test method. Background technique [0002] For a long time, the total dose ionizing radiation test of semiconductor components has been using Co source as the radiation source. The US military test standard MIL-STD-883C also stipulates 60 Co gamma rays are the standard test source for total dose radiation testing. But large Co sources can only use natural radioactive 60 Co material is harmful to the environment, the radiation dose rate is relatively low, and the radiation time is long, so it cannot meet the requirements of accelerated experiments and radiation testing of a single silicon wafer level wafer, and is not suitable for large-scale use, especially for production enterprises. [0003] As...

AI Technical Summary

Problems solved by technology

This method requires adding a bias to the device substrate irradiated by X-rays, but how high the bias should be added is difficult to determine

Therefore, it is difficult to estimate the X-ray to 60 Co γ-ray damage

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