A 3D printing packaging method for flip chips

Abstract

The present invention provides a 3D printing packaging method of a flip chip. The method is characterized by comprising the following steps of S1 utilizing a computer to design a three-dimensional digital model of an LED device, programming the LED device, after the hierarchical slicing processing, introducing a 3D printer, and utilizing the computer to control the hierarchical printing; S2 utilizing a suction nozzle to absorb the flip chip, and fixing under a reflector cup; S3 carrying out the 3D printing on a solder layer and a radiating substrate, wherein the radiating substrate is equipped with a leading-out circuit in electrode connection with the chip, and further can comprises a step S4 of filling the fluorescent powder. Relative to the general packaging, according to the present invention, the die bonding wires and the eutectic solders are not needed, the packaging yield is improved, a support and a PCB or a COB do not need to purchase, the packaging cost is reduced, the packaging research and development cycle is shortened, and the packaging appearance diversity is increased, and the LED thinning and miniaturization are promoted.

Description

technical field [0001] The invention relates to the technical field of LED packaging, in particular to a flip-chip 3D printing packaging method. Background technique [0002] The existing flip chip has a cross-sectional structure such as figure 1 As shown, the specific packaging method is carried out according to the following steps: S1: making the chip (2), the epitaxial layer of the chip (2) is made with a reflective layer and a multi-layer insulating layer, and the asymmetric electrode is made into two through the metal expansion layer. Symmetrical electrode; S2: use eutectic soldering or solder paste soldering to connect the chip electrode (3) and the lead-out circuit (9) with the solder layer (7), so that the flip chip (2) is fixed on the heat dissipation substrate (6); S3: filling material (8) under the electrode; S4: filling phosphor (10). Due to the limitation of the shape of the flip chip, there are the following problems: 1. For the flip chip, in order to improve...

AI Technical Summary

Problems solved by technology

Due to the limitation of the shape of the flip chip, there are the following problems: 1. For the flip chip, in order to improve the accuracy of the eutectic, the method of multi-layer insulation is generally used to make the internal asymmetrical electrode into a symmetrical electrode. It is convenient for eutectic, but due to the poor thermal conductivity of the insulating layer material, this method increases the thermal resistance; 2. Since the flip chip cannot see the back shape, the bottom can only use a flat surface for crystal bonding, and the packaged substrate must be It is flat, and the eutectic soldering method used will also cause problems such as uneven soldering, empty soldering, and virtual soldering; 3. The pattern on the electrode surface cannot be seen when the flip chip is bonded, only the outline on the back Determine the position, and the chip will also cover the substrate, so it is difficult to align, the accuracy of eutectic welding is poor, and the accuracy of flip chip welding is low; 4. The optical path is poor. When the light type is not good, after packaging, the point light source Expand directly from the chip to the lamp bead or COB board, and the overall effect of the lamp is not very good

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