Organic solar cell with adjustable incident light intensity and preparation method thereof
A solar cell and incident light technology, applied in the field of green solar energy, can solve the problems of affecting the promotion of OPV, complex production process and high cost
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Embodiment 1
[0039] In this embodiment, see figure 1 , An organic solar cell with adjustable incident light intensity, consisting of a photoluminescent layer 1, a transparent substrate 2, a transparent conductive anode 3, a hole injection layer 4, a donor layer 5, and an acceptor layer 6 from bottom to top. , The electron transport layer 7 and the electrode cathode layer 8 are combined, and the donor layer 5 is made of any one material or any combination of materials of organic solar cell materials with a set absorption range and a narrow band with strong absorption. The layer 6 is made of any material or any mixture of materials other than fullerenes and derivatives or set energy level electron transport materials. The thickness of the photoluminescent layer 1 is 5-20nm, and the photoluminescent layer The material of 1 is any one or several of various hole transport materials and electron transport materials that absorb ultraviolet light and emit visible light with a wide band gap, and incl...
Embodiment 2
[0045] This embodiment is basically the same as the first embodiment, and the special features are:
[0046] In this embodiment, see figure 1 , Choose a transparent ITO glass substrate etched into a certain mask as the anode, and use detergent, acetone, deionized water, and isopropanol to ultrasonically clean for 20 minutes, dry with nitrogen, and UV / O 3 Process for 15 minutes for backup. Deposit the TTPPA light-emitting layer on the glass side of the substrate by vacuum evaporation method with a thickness of 5-20nm; then the substrate is calcined at different temperatures for a certain period of time to obtain the condensed phase of TTPPA; and then vacuum vaporized on the ITO side of the substrate Hole injection layer MoO 3 , The thickness is 5-10nm; next, a rubrene donor layer with a thickness of 20-60nm and a BAlq acceptor layer with a thickness of 30-50nm are deposited; then the electron transport layer material Bphen with a thickness of 5-10nm is deposited to prepare the elec...
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