Organic solar cell with adjustable incident light intensity and preparation method thereof
A solar cell and incident light technology, applied in the field of green solar energy, can solve the problems that affect the promotion of OPV, complicated manufacturing process, and high cost
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Embodiment 1
[0039] In this example, see figure 1 , an organic solar cell with adjustable incident light intensity, which consists of a photoluminescent layer 1, a transparent substrate 2, a transparent conductive anode 3, a hole injection layer 4, a donor layer 5, and an acceptor layer 6 from bottom to top. , the electron transport layer 7 and the electrode cathode layer 8 are combined. The donor layer 5 is made of any one of the organic solar cell materials with a narrow band and strong absorption in the set absorption range or any combination of several materials. The acceptor Layer 6 is made of any one of non-fullerene and its derivatives or electron transport materials with set energy levels or any mixed materials. The thickness of photoluminescent layer 1 is 5-20nm. The material of 1 is any material or any several materials in various hole transport materials and electron transport materials that absorb ultraviolet light and emit visible light with a wide band gap, and include quantu...
Embodiment 2
[0045] This embodiment is basically the same as Embodiment 1, especially in that:
[0046] In this example, see figure 1 , select a transparent IT0 glass substrate etched into a certain mask as the anode, clean it with lotion, acetone, deionized water, and isopropanol for 20 minutes, blow dry with nitrogen, and UV / O 3 Process for 15 minutes and set aside. Deposit the TPTPA luminescent layer on the glass side of the substrate by vacuum evaporation, with a thickness of 5-20nm; then calcinate the substrate at different temperatures for a certain period of time to obtain the condensed phase of TPTPA; then vacuum evaporate the ITO side of the substrate Plating hole injection layer MoO 3 , with a thickness of 5-10nm; next, deposit a rubrene donor layer with a thickness of 20-60nm and a BAlq acceptor layer with a thickness of 30-50nm; then deposit Bphen, an electron transport layer material with a thickness of 5-10nm, to prepare an electron transport layer ; Finally replace the ma...
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Abstract
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