A charge probe based on a single-electron transistor and its preparation method

Abstract

The invention relates to a charge probe based on a single electron transistor (SET) and a preparation method thereof. The SET is integrated on the head face of a pinpoint of a probe cantilever beam; the source, the drain, the side grid and the coulomb island of the SET are embedded in silicon dioxide on the head face of the pinpoint of the probe cantilever beam; the charge probe takes a silicon-on-insulator (SOI) as a substrate; basic composition units of the SET are the source, the drain, the side grid, the coulomb island and a tunnel barrier integrated on the top silicon of the substrate; furthermore, the SET is positioned on the head face of the charge probe pinpoint, wherein gold nanoparticles are used as the coulomb island of the SET, and positioned among the source, the drain and the side grid; the coulomb island is encircled by a silicon dioxide medium obtained by oxidization of the top silicon of the substrate; the coulomb island, the source and the drain are coupled in a tunnel combination manner; and the coulomb island and the side grid are coupled in a capacitance manner. By means of the charge probe based on the SET and the preparation method thereof disclosed by the invention, a foundation is established for performing high-sensitivity scanning detection of sample surface charge distribution at the nanoscale level by an atomic power SET scanning probe.

Description

technical field [0001] The invention relates to the field of nanoelectronic devices and micro-nano sensors, in particular to a charge probe based on a single-electron transistor and a preparation method thereof, which are used for charge scanning detection. Background technique [0002] Quantum dot single-electron transistors (SETs) based on the Coulomb blocking effect and electron tunneling effect have extremely high sensitivity to small charge changes in their adjacent areas, and are suitable for fixed-point high-sensitivity charge detection at the micro-nano scale. The core of SET sensitive to charge is the Coulomb island with a scale of only tens of nanometers. The source and drain electrodes are coupled to the Coulomb island through the tunneling barrier, and the control gate and the Coulomb island are coupled through capacitive coupling. SET is suitable for fixed-point high-sensitivity charge detection at the micro-nano scale. With the development and maturity of nano...

AI Technical Summary

Problems solved by technology

[0003] Due to the difficulty of preparing SET technology on fiber optic probes and the low preparation efficiency, based on the above-mentioned SET probe technology and in view of its shortcomings, people have improved and optimized the SET probe technology.

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