Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Graphite/silicon carbide compact composite material preparation method

A composite material and silicon carbide technology, which is applied in the field of preparing graphite/silicon carbide dense composite materials, can solve problems such as short cycle time, purity of graphite parts and coating bonding force, and achieve short cycle time, solve the problems of purity and coating bonding force Problems, the effect of low power consumption

Active Publication Date: 2017-02-22
江苏协鑫特种材料科技有限公司
View PDF8 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Purpose of the invention: The purpose of the invention is to propose a new graphite / silicon carbide dense composite material with short cycle time and low power consumption, so as to solve the problems of the purity and coating bonding force of graphite parts, and prevent the introduction of impurities into subsequent sections

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Graphite/silicon carbide compact composite material preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] A preparation method of graphite / silicon carbide dense composite material, comprising the steps of:

[0022] (1) After ultrasonically cleaning the graphite parts, brush the slurry made of certain silicon carbide particles, the strength of the silicon carbide particles ranges from 1-20 μm, and the slurry is composed of silicon carbide particles, graphite glue, and diluent in a mass ratio of 3:3: 1 is mixed and evenly painted on the surface of graphite parts, and then transferred to a drying oven for at least 90 ° C for more than 2 hours to form a dense silicon carbide particle layer on the surface of graphite parts. The thickness of the coating is 60 μm, and a graphite piece coated with a silicon carbide particle layer is obtained, which is then sent as a substrate into a CVD reactor to deposit a silicon carbide coating.

[0023] (2) CVD deposition process conditions:

[0024] 1) Lower the bottom flange, open the furnace tube, and put in the base material;

[0025] 2) ...

Embodiment 2

[0034] A preparation method of graphite / silicon carbide dense composite material, comprising the steps of:

[0035] (1) After ultrasonically cleaning the graphite parts, brush the slurry made of certain silicon carbide particles. The strength of the silicon carbide particles ranges from 1-20 μm. The slurry is composed of silicon carbide particles, graphite glue, and diluent in a mass ratio of 3:4: 1 is mixed and evenly painted on the surface of graphite parts, and then transferred to a drying oven for at least 90 ° C for more than 2 hours to form a dense silicon carbide particle layer on the surface of graphite parts. The thickness of the coating is 80 μm, and a graphite piece coated with a silicon carbide particle layer is obtained, which is then sent as a substrate into a CVD reactor to deposit a silicon carbide coating.

[0036] (2) CVD deposition process conditions:

[0037] 1) Lower the bottom flange, open the furnace tube, and put in the base material;

[0038] 2) Lift...

Embodiment 3

[0047] A preparation method of graphite / silicon carbide dense composite material, comprising the steps of:

[0048] (1) After ultrasonically cleaning the graphite parts, brush the slurry made of certain silicon carbide particles. The strength of the silicon carbide particles ranges from 1-20 μm. The slurry is composed of silicon carbide particles, graphite glue, and diluent in a mass ratio of 4:3: 1 is mixed and evenly painted on the surface of graphite parts, and then transferred to a drying oven for at least 90 ° C for more than 2 hours to form a dense silicon carbide particle layer on the surface of graphite parts. The thickness of the coating is 30 μm, and a graphite piece coated with a silicon carbide particle layer is obtained, which is then sent as a substrate into a CVD reactor to deposit a silicon carbide coating.

[0049] (2) CVD deposition process conditions:

[0050] 1) Lower the bottom flange, open the furnace tube, and put in the base material;

[0051] 2) Lift...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
coating thicknessaaaaaaaaaa
particle sizeaaaaaaaaaa
Ash contentaaaaaaaaaa
Login to View More

Abstract

The invention discloses a graphite / silicon carbide compact composite material preparation method, comprising the steps of before the sediments of the silicon carbide on the surface of a graphite article, applying a layer of silicon carbide particles on the graphite article as a transition layer, then applying CVD sediments for the coated silicon carbide layer. The method works through applying a layer of silicon carbide particles on the graphite article as the transition layer, and then applying CVD sediments for the coated silicon carbide layer, since the silicon carbide particles transition layer has small holes, the sediments of the silicon carbide on the surface of the transition layer penetrates into the holes, enabling a more compact combination of the coated layer and the base body; at the same while, the method works at short cycles, at low electricity consumption, to effectively solve the question mark of the pureness measure of the graphite article and the binding force of the coated layer, and to prevent from introducing impurities to the section of follow-up work.

Description

technical field [0001] The invention relates to the technical field of preparation of inorganic non-metallic materials, in particular to a method for preparing graphite / silicon carbide dense composite material. Background technique [0002] To deposit silicon carbide on the surface of graphite parts, methyltrichlorosilane is usually used as a precursor. After a chemical vapor deposition reaction occurs, a silicon carbide coating is obtained, and HCl gas is produced by-product. In some specific applications, the silicon carbide coating is required to be tightly bonded, which can prevent some impurities of the graphite parts from entering the reaction system; in addition, the silicon carbide coating is also required to be tightly bonded and have good wear resistance. For example, fluidized bed reactors for the production of granular silicon are typically lined with graphite and coated with a silicon carbide coating on the surface of the graphite liner. Purified graphite usual...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C04B41/87
CPCC04B41/009C04B41/5059C04B41/87C04B41/52C04B35/522
Inventor 张春伟田新于伟华蒋立民朱建中
Owner 江苏协鑫特种材料科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com