Single crystal furnace for achieving rapid crystal growth through chemical heat sink enhanced cooling technology

Abstract

The invention discloses a single crystal furnace for achieving rapid crystal growth through a chemical heat sink enhanced cooling technology and mainly relates to a reaction device capable of conveying reactants and carrying out a chemical endothermic reaction inside the device. The reaction device is composed of a graphite cylinder and a reaction cylinder, wherein the reaction cylinder is made of an inert material; the reactants are introduced from an inlet, the chemical endothermic reaction is carried out in the reaction cylinder at a high temperature, the temperature on the surface of the reaction device and in a nearby argon gas area thereof is reduced, heat on the crystal surface is rapidly transferred, and incompletely reacted reactants and the reaction product are discharged out of the furnace by an outlet. The single crystal furnace is reasonable in structural design, the reactants can react in the reaction device, and impurities can be prevented from being introduced into the furnace in the reaction process. According to the device disclosed by the invention, the growing crystal is subjected to enhanced cooling by virtue of the chemical endothermic reaction, the heat on the crystal surface is rapidly transferred, and the axial temperature gradient inside the crystal is obviously improved, so that the crystal growth speed is improved, and the aim of reducing the crystal preparation cost is achieved.

Description

[0001] Technical field: [0002] The invention belongs to the field of Czochralski single crystal growth devices, in particular to a single crystal furnace for realizing rapid crystal growth through chemical heat sink enhanced cooling technology. [0003] Background technique: [0004] Czochralski is one of the main techniques for single crystal growth. Taking crystalline silicon as an example, it is the electronic information basic material of contemporary artificial intelligence, automatic control, information processing, photoelectric conversion and other semiconductor devices, and also has a huge market in the photovoltaic industry. The conversion efficiency of monocrystalline silicon cells is 5% higher than that of traditional polycrystalline silicon cells, but the production cost of monocrystalline silicon is high. Therefore, under the premise of ensuring crystal quality, improving production efficiency and reducing energy consumption has become a breakthrough in reducin...

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to provide a single crystal furnace that realizes rapid crystal growth through chemical heat sink enhanced cooling technology, so as to solve the heat dissipation problem that it is difficult to quickly remove a large amount of latent heat of crystallization under the condition of high pulling speed of the crystal by adopting the traditional air cooling method

Images