Preparation method of suede structure of crystalline silicon solar cell

Abstract

The invention discloses a preparation method of a suede structure of a crystalline silicon solar cell. The preparation method comprises the following steps: (1) forming a porous layer structure on the surface of a silicon wafer; (2) treating the porous layer structure of the step (1) with the mixed solution; (3) using the cleaning fluid to remove residual metal particles; (4) and then using the first chemical etching solution for surface etching, you can get the suede structure of the crystalline silicon solar cell. The preparation method greatly prolongs the service life of the mixture of hydrofluoric acid and nitric acid and ensures the stability and uniformity of the suede structure.

Description

technical field [0001] The invention relates to a method for preparing a textured surface structure of a crystalline silicon solar cell, belonging to the technical field of solar cells. Background technique [0002] With the wide application of solar cell components, photovoltaic power generation occupies an increasingly important proportion in new energy and has achieved rapid development. Among the current commercialized solar cell products, crystalline silicon (monocrystalline and polycrystalline) solar cells have the largest market share, maintaining a market share of more than 85%. [0003] At present, in the production process of solar cells, the textured structure on the surface of silicon wafers can effectively reduce the surface reflectance of solar cells, which is one of the important factors affecting the photoelectric conversion efficiency of solar cells. In order to obtain a good textured structure on the surface of crystalline silicon solar cells to achieve a ...

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Problems solved by technology

Invention patent application WO2014120830 (A1) discloses a method for preparing crystalline silicon nano-texture, which controls the shape of nano-texture by annealing, but the method is complicated and not conducive to the needs of industrial production

[0006] However, it has been found in practical applications that the above-mentioned method has the following problems: (1) the first chemical etching solution in the step (2) of the above-mentioned method mainly has two functions, one is to etch the porous silicon layer formed by metal catalysis; The second is to clean the residual metal particles on the surface of the silicon wafer; yet, with the increase in the number of processed silicon wafers, the first chemical etching solution (i.e. HF / HNO) in step (2) 3 The Ag ions in the mixed solution) are more and more, and become HF / HNO rich in Ag ions 3 mixed solution, and silicon wafers will undergo metal ion-catalyzed chemical etching reaction again in this solution, which will affect the stability and uniformity of the textured structure, thereby affecting the electrical performance of solar cells; (2) as the number of processed silicon wafers increases increase, the Ag ions in the first chemical etching solution in the step (2) of the above-mentioned method are more and more, and the Ag ions will be attached to the silicon wafer again in reverse, and it is difficult to remove the Ag ion attached to the silicon wafer in the first process. Particles are washed clean, resulting in HF / HNO 3 The hybrid solution has a very short life, further increasing the cost

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