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Metal oxide, QLED and preparation method

An oxide and metal technology, applied in the fields of semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve the problems of complex device structure and inability to apply devices on a large scale, and achieve a simple process, reduce defects, and improve efficiency. Effect

Active Publication Date: 2017-02-22
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a metal oxide, QLED and a preparation method, aiming to solve the problem that the existing metal oxide surface treatment method makes the device structure complex and cannot be used in large-scale devices. question

Method used

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  • Metal oxide, QLED and preparation method
  • Metal oxide, QLED and preparation method
  • Metal oxide, QLED and preparation method

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no. 1 example

[0054] The present invention also provides a first embodiment of QLED, such as figure 2 As shown, it includes, from bottom to top: a substrate 10 including a bottom electrode 11 , the above-mentioned metal oxide 12 , a quantum dot light-emitting layer 13 , an electron transport layer 14 , and a top electrode 15 .

[0055] The present invention also provides a second embodiment of the preparation method of QLED, such as image 3 As shown, it includes the steps:

[0056] Step T1, depositing an electron transport layer on the substrate containing the bottom electrode;

[0057] Step T2, depositing a quantum dot light-emitting layer on the electron transport layer;

[0058] Step T3, depositing the above-mentioned metal oxide on the quantum dot light-emitting layer;

[0059] Step T4, finally making the top electrode.

[0060] In step T1, first deposit an electron transport layer on the substrate containing the bottom electrode, the electron transport layer can be n-type ZnO or ...

Embodiment 1

[0066] Dissolve 0.2g of ammonium molybdate tetrahydrate into 10ml of water, then stir the solution for 5min, then add 1mg of PVP, then put it into a 20ml polytetrafluoroethylene-lined reactor, react at 150°C for 30min, After cooling to room temperature, PVP-coated molybdenum oxide was obtained.

Embodiment 2

[0068] Dissolve 0.8 g of ammonium molybdate tetrahydrate into 80 ml of water, then stir the solution for 5 min, add 80 mg of PVP, then put it into a 20 ml polytetrafluoroethylene-lined reactor, react at 150 ° C for 30 min, wait Cool to room temperature to obtain PVP-coated molybdenum oxide.

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Abstract

The invention discloses a metal oxide, QLED and preparation method wherein the metal oxide preparation method comprises the following steps: dissolving the precursor of the metal oxide in a solvent; mixing it with PVP and then having the mixture reacted at 100 to 300 degrees for 30 minutes to 2 hours to obtain a PVP coated metal oxide; or dissolving the precursor of the metal oxide in a solvent for reaction at 100 to 300 degrees for 30 minutes to 2 hours before being mixed with PVP to obtain a PVP coated metal oxide; or mixing the nano-particle solution of the metal oxide with the PVP to obtain a PVP coated metal oxide. According to the invention, a metal oxide is coated with PVP, which reduces the defects of the surface of the metal oxide and raises the efficiency of OLED. The method is simple and easy to perform and can be applied to components on a large scale.

Description

technical field [0001] The invention relates to the technical field of light emission, in particular to a metal oxide, QLED and a preparation method. Background technique [0002] At present, in QLED devices, metal oxides are widely used as electron transport layer and hole transport layer; compared with organic compounds, metal oxides have high carrier mobility, adjustable energy level structure and excellent stability . However, most metal oxides are synthesized in air, so their surface contains a large number of hydroxyl groups, which can act as exciton quenching groups, resulting in weakened device performance. It has been reported in the literature that there is a strong quenching effect between metal oxides such as NiO and organic interfaces. Therefore, in order to solve the above problems, some researchers have separated the interface between the light-emitting layer and the metal oxide by modifying the injection layer or inserting an organic molecular barrier layer...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/56H01L51/54
CPCH10K50/115H10K71/00
Inventor 王宇曹蔚然
Owner TCL CORPORATION