Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A cobalt-vanadium-silicon-gallium-based high-temperature shape memory alloy

A memory alloy, silicon gallium technology, applied in the field of alloys, can solve the problems such as the shape memory effect needs to be improved, the alloy structure is prone to decomposition, and the thermal cycle stability is poor, and achieves excellent thermal cycle stability, good shape memory effect, and excellent comprehensive. performance effect

Active Publication Date: 2018-06-29
XIAMEN UNIV
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the main problems in these alloy systems are: (1) the higher the working temperature of the high-temperature shape memory alloy, the easier the atoms diffuse, and the easier the alloy structure is to decompose, so the thermal cycle stability is poor; (2) for For most single-phase martensitic alloys, the ductility is not good enough and processing is difficult. (3) Very few alloys exhibit better comprehensive properties, such as Ni-Ti-Pd alloys (V.Khachin:Rev.Phys.Appl., 1989,24,733; Y.Lo and S.Wu:Scr.Metall.Mater.,1991,27,1097), but Pd is expensive, which limits its practical application
It can be seen that the shape memory effect of the high temperature shape memory alloy needs to be improved

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A cobalt-vanadium-silicon-gallium-based high-temperature shape memory alloy
  • A cobalt-vanadium-silicon-gallium-based high-temperature shape memory alloy
  • A cobalt-vanadium-silicon-gallium-based high-temperature shape memory alloy

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Using high-purity metal cobalt (Co), vanadium (V), silicon (Si), and gallium (Ga) as raw materials, after cleaning, the ratio of 60% Co, 15% V, 20% Si, 5% Ga is alloy 1 , put the raw materials in a vacuum electric arc furnace, and vacuumize to 6.6×10 -3 Below Pa, refill argon gas to -0.05MPa and then strike the arc, control the melting current at 200-300A, turn on the magnetic stirring power supply, ensure that all metals are completely melted together, and then turn off the power supply. Turn over the obtained alloy ingot with a manipulator, and then repeatedly smelt it 5 times to make the raw material smelt evenly; cut the obtained alloy into small pieces by electric spark, place it in a quartz tube and vacuumize it to 5Pa, fill it with argon gas, and put the quartz After the tube was placed at 1200°C for 12 hours of homogenization treatment, it was quenched and cooled in ice water to obtain the high-temperature shape memory alloy. Example 2:

Embodiment 2

[0043] Using high-purity metal cobalt (Co), vanadium (V), silicon (Si), gallium (Ga), and dysprosium (Dy) as raw materials, after cleaning, press 68% Co, 10% V, 15% Si, 6.5% Ga , the proportion of 0.5% Dy is alloy 2, the raw material is placed in a vacuum electric arc furnace, and the vacuum is evacuated to 6.6×10 -3 Below Pa, refill argon gas to -0.05MPa and then strike the arc, control the melting current at 200-300A, turn on the magnetic stirring power supply, ensure that all metals are completely melted together, and then turn off the power supply. Turn over the obtained alloy ingot with a manipulator, and then repeatedly smelt it 5 times to make the raw material smelt evenly; cut the obtained alloy into small pieces by electric spark, place it in a quartz tube and vacuumize it to 5Pa, fill it with argon gas, and put the quartz After the tube was placed at 1000°C for 6 hours of homogenization treatment, it was quenched and cooled in ice water to obtain the high-temperature...

Embodiment 3

[0045] Using high-purity metal cobalt (Co), vanadium (V), silicon (Si), gallium (Ga), tantalum (Ta) as raw materials, after cleaning, press 65% Co, 16% V, 16% Si, 2% Ga , 1% Ta ratio is alloy 3, the raw material is placed in a vacuum electric arc furnace, and the vacuum is evacuated to 6.6×10 -3 Below Pa, refill argon gas to -0.05MPa and then strike the arc, control the melting current at 200-300A, turn on the magnetic stirring power supply, ensure that all metals are completely melted together, and then turn off the power supply. Turn over the obtained alloy ingot with a manipulator, and then repeatedly smelt it 5 times to make the raw material smelt evenly; cut the obtained alloy into small pieces by electric spark, place it in a quartz tube and vacuumize it to 5Pa, fill it with argon gas, and put the quartz After the tube was placed at 1100°C for homogenization treatment for 12 hours, and then quenched and cooled in ice water, the high-temperature shape memory alloy was obt...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
phase transition temperatureaaaaaaaaaa
phase transition temperatureaaaaaaaaaa
tensile strengthaaaaaaaaaa
Login to View More

Abstract

The invention discloses a cobalt-vanadium-silicon-gallium base high-temperature shape memory alloy, and relates to an alloy. The cobalt-vanadium-silicon-gallium base high-temperature shape memory alloy comprises the following components according to atomic percentages: 60-70% of cobalt, 10-20% of vanadium, 15-25% of silicon, 2-8% of gallium, and 0-1% of one of gadolinium, dysprosium and tantalum. A preparation method comprises the following steps: all the raw materials are put in an arc smelting furnace for vacuumizing; then, argon is introduced for arc striking; a magnetic stirring switch is opened; the current is gradually increased to 250-350 A; after once smelting is finished, an obtained alloy ingot is overturned by a manipulator; the smelting is repeated by 4-5 times; and the prepared alloy ingot is machined as a needed shape by an electrospark cutting machine, is put in a quartz tube, is filled with argon after vacuumizing, is homogenized by 4-24 h at 1000-1200 DEG C, and is quenched by ice water to obtain the cobalt-vanadium-silicon-gallium base high-temperature shape memory alloy. The cobalt-vanadium-silicon-gallium base high-temperature shape memory alloy is excellent in comprehensive performance.

Description

technical field [0001] The invention relates to an alloy, in particular to a cobalt-vanadium-silicon-gallium-based high-temperature shape memory alloy with good comprehensive properties. Background technique [0002] Shape memory alloys have high response frequency and large recoverable strain, and have been widely used as sensors in aerospace, medical and intelligent systems and other fields. But so far, the martensitic transformation temperature of most shape memory alloys is below 130 °C, which seriously hinders its application in high-temperature fields such as aerospace, chemical industry, and nuclear industry. In order to meet the functional requirements of shape memory alloys at high temperatures, shape memory alloys with a phase transition temperature higher than 130 °C, that is, high temperature shape memory alloys, have gradually become an important research branch. [0003] So far, there have been many research reports on high-temperature shape memory alloys (J.M...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C22C19/07
CPCC22C19/07
Inventor 刘兴军蒋恒星王翠萍杨水源黄路生张锦彬黄艺雄
Owner XIAMEN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products