Quantum dot light-emitting thin film enhanced ultraviolet imaging detector

A technology of quantum dot luminescence and ultraviolet imaging, which is applied in the field of photodetectors, can solve the problems of easy contamination or damage, weak resistance to physical damage, and poor stability of organic conversion film materials, so as to achieve high quantum efficiency and avoid self-absorption and reflection The effect of large loss and high definition

Active Publication Date: 2017-03-29
BEIJING INSTITUTE OF TECHNOLOGYGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the currently widely used technical route of "silicon-based imaging device + organic conversion film" takes into account the simultaneous response to ultraviolet radiation and visible light, and cannot meet the detection requirements of solar-blind (240nm-280nm) and near-ultraviolet (300nm-400nm) bands. need
In addition, the organic conversion film material has poor stability, is easily polluted or damaged when exposed to the air, will degrade when exposed to ultraviolet radiation for a long time, and has weak resistance to physical damage.

Method used

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  • Quantum dot light-emitting thin film enhanced ultraviolet imaging detector
  • Quantum dot light-emitting thin film enhanced ultraviolet imaging detector
  • Quantum dot light-emitting thin film enhanced ultraviolet imaging detector

Examples

Experimental program
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Embodiment 1

[0039] Embodiment 1, as figure 2 As shown, the detector is mainly composed of a micro-nano optical structure that reflects visible light and anti-ultraviolet radiation, a quantum dot luminescent film, an EMCCD with a pixel-level grid structure on the surface of the photosensitive area, and an anti-reflection quantum dot luminescent film on the surface of the EMCCD photosensitive area. Composition of optical thin films with peak emission wavelength and near-infrared cutoff. The quantum dot luminescent film is used as an ultraviolet-visible light conversion film. The luminous efficiency of the quantum dot luminescent film is high, the response band can be adjusted, and the response speed is fast; the surface of the EMCCD photosensitive area is made with a pixel-level grid structure, and the quantum dot luminescent film is embedded in it; The micro-nano optical structure is highly transparent to ultraviolet radiation and highly reflective to visible light, and together with the ...

Embodiment 2

[0050] Embodiment 2, the perovskite quantum dot light-emitting thin film pasted on the surface of the photosensitive area of ​​the front-illuminated EMCCD and carried out the imaging experiment are described as an embodiment as follows:

[0051] The schematic diagram of the perovskite quantum dot light-emitting film directly pasted on the surface of the photosensitive area of ​​the front-illuminated EMCCD is as follows image 3 shown.

[0052] The parameters of the front-illuminated EMCCD used in this embodiment are: the detector material is silicon, the pixel size is 576×288, the pixel center distance is 20 μm×30 μm, the size of the photosensitive area of ​​the detector is 11.52mm×8.64mm, and the maximum multiplication gain 1000 times.

[0053] The parameters of the perovskite quantum dot luminescent film in this embodiment are: the position of the fluorescence emission peak is 525nm, the half-peak width is ~24nm, the absolute fluorescence quantum yield is ~85%, the film thi...

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Abstract

The invention discloses a quantum dot light-emitting thin film enhanced ultraviolet imaging detector, comprising a silicon-based surface array device of which the photosensitive area surface is of a pixel-level grid structure, a quantum dot light-emitting thin film and a micro-nano optical structure, wherein the micro-nano optical structure is used for reflecting visible light and increasing the permeability of ultraviolet radiation; the quantum dot light-emitting thin film is used for converting ultraviolet light to the visible light; the quantum dot light-emitting thin film is made of a quantum dot material or a quantum dot composite material; the silicon-based surface array device with the pixel-level grid structure is used for detecting the visible light emitted by the quantum dot light-emitting thin film; and the quantum dot light-emitting thin film and the silicon-based surface array device implement pixel-level coupling and spectral matching through the micro-nano optical structure. The detector disclosed by the invention has the advantages of adjustable and controllable response wave bands, relatively high sensitivity, fast response, large surface array, low cost and high image definition.

Description

technical field [0001] The invention belongs to the field of photoelectric detectors, and in particular relates to a quantum dot luminescent thin film enhanced ultraviolet imaging detector. Background technique [0002] A UV detector is a photodetector that converts UV radiation into an electrical signal (current or voltage). The ultraviolet radiation has a wide band, 10nm to 380nm. The ultraviolet imaging detector proposed by the present invention mainly detects ultraviolet radiation in the sun-blind band of 240nm to 280nm, the near ultraviolet band of 300nm to 400nm, or the band of 240nm to 400nm, and can be used in missiles in the military field Exhaust flame warning, ultraviolet imaging guidance and ultraviolet communication can be used for corona detection and fire early warning in civilian fields. [0003] Ultraviolet detectors are divided into two categories: light-emitting vacuum devices and solid-state devices, such as figure 1 shown. Light-emitting vacuum device...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/09H01L31/12
CPCH01L31/09H01L31/125
Inventor 王岭雪钟海政张猛蛟陈远金周青超吴显刚蔡毅
Owner BEIJING INSTITUTE OF TECHNOLOGYGY
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