Method for producing bismuth vanadate film through two-step technology
A technology of bismuth vanadate and thin films, which is applied in the fields of vanadium compounds, chemical instruments and methods, and inorganic chemistry, and can solve the problems of low cost of ingredients, high energy consumption, and high cost
Inactive Publication Date: 2017-04-26
BEIHANG UNIV
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Problems solved by technology
The cost of ingredients used in this recipe is low, the reaction conditions are mild, and the quality and stability of the obtained bismuth vanadate film are better; it overcomes the defects of high energy consumption, poor quality and high cost required by the prior art
Method used
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[0015] 1. Dissolve 3.32g of potassium iodide in 50mL of deionized water, then add 0.97g of bismuth nitrate pentahydrate, stir well and add 600uL of 1mol / L dilute HNO 3 ;
[0016] 2. Dissolve 0.49g p-benzoquinone in 20mL absolute ethanol;
[0017] 3. Mix the two solutions and let stand for 2 hours;
[0018] 4. Using the electrodeposition method, the working voltage is -0.1V, the deposition time is 300s, and the bismuth oxyiodide thin film is prepared;
[0019] Configure 50mL of 0.1mol / L ammonium metavanadate solution, and transfer it and bismuth oxyiodide film into the reaction kettle. The hydrothermal temperature was 180° C., and the reaction time was 18 hours to obtain a bismuth vanadate film sample.
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The invention relates to a method for producing a bismuth vanadate film through a two-step technology. The method comprises the following steps: depositing a bismuth oxyiodide (BiOI) film on a glass substrate through an electrodeposition technology, carrying out a reaction on the bismuth oxyiodide film and an ammonium metavanadate solution in a reaction kettle by using a hydrothermal technology at 180 DEG C for 24 h, taking out the obtained reaction product, and washing and drying the reaction product to obtain the final film sample. The bismuth oxyiodide film with good uniformity, high visible light response and excellent performances can be obtained through controlling the electrodeposition parameters of bismuth oxyiodide and the hydrothermal time duration. The production method has the characteristics of simple process, easiness in operation, mild reaction conditions, low cost, energy saving and environmental protection.
Description
technical field [0001] The invention relates to a method for preparing a bismuth vanadate film by using a two-step method. Background technique [0002] Environmental pollution and energy crisis are the two most urgent problems facing society today. Among many environmental treatment technologies, semiconductor oxides, as catalysts, can use sunlight as a driving force to achieve heterogeneous catalysis and can react at room temperature. They have the functions of decomposing organic matter, decomposing water to produce hydrogen and oxygen, reducing carbon dioxide and reducing heavy metal ions. . Semiconductor photocatalysts have stable performance, low price, can effectively degrade most organic substances, and are resistant to chemical corrosion, so they have great application prospects in environmental governance. [0003] Among them, the semiconductor bismuth vanadate has attracted more and more attention due to its good visible-light photocatalytic activity. Bismuth v...
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Patent Timeline
Login to View More IPC IPC(8): C01G31/00B01J23/22
CPCC01G31/00B01J23/22C01P2002/72C01P2004/03B01J35/39
Inventor 郝维昌张铮崔丹丹
Owner BEIHANG UNIV