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Semiconductor device and electronic device

A semiconductor and device technology, applied in the field of semiconductor devices and electronic devices, can solve problems such as device performance impact, achieve the effect of improving performance and avoiding consumption

Active Publication Date: 2017-04-26
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this way, the AA area under the PAD is used to make the through hole 101 and is consumed, which has a negative impact on the performance of the device.

Method used

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  • Semiconductor device and electronic device
  • Semiconductor device and electronic device

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Experimental program
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Effect test

Embodiment 1

[0034] Below, refer to figure 2 The detailed structure of the semiconductor device proposed by the embodiment of the present invention will be described. in, figure 2 A schematic structural diagram of a semiconductor device in an embodiment of the present invention is shown.

[0035] Firstly, the semiconductor device of the present invention includes: a substrate 200, which includes a first surface 2001 (ie, the front surface of the substrate) and a second surface 2002 opposite to the first surface (ie, the reverse surface of the substrate).

[0036] Specifically, the substrate 200 may be at least one of the materials mentioned below: silicon, silicon-on-insulator (SOI), silicon-on-insulator (SSOI), silicon-germanium-on-insulator (S-SiGeOI) , silicon germanium on insulator (SiGeOI) and germanium on insulator (GeOI) and so on. In this embodiment, preferably, the substrate 200 is silicon-on-insulator.

[0037] A plurality of CMOS transistors 201 a and 201 b are also formed...

Embodiment 2

[0050] The present invention also provides an electronic device, which includes the semiconductor device in the first embodiment above.

[0051] The electronic device of this embodiment can be any electronic product or equipment such as mobile phone, tablet computer, notebook computer, netbook, game console, TV set, VCD, DVD, navigator, camera, video recorder, voice recorder, MP3, MP4, PSP, etc. , can also be any intermediate product including the aforementioned semiconductor device. Due to the use of the above-mentioned semiconductor device, the semiconductor device has excellent performance, so the electronic device of the embodiment of the present invention also has better performance.

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PUM

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Abstract

The invention provides a semiconductor device and electronic device which relate to the semiconductor technology field. The semiconductor device comprises a substrate including a first surface and a second surface opposite to the first surface; an interlayer dielectric layer formed on the first surface of the substrate; a metal interconnection structure formed in the interlayer dielectric layer; a welding plate in connection with the bottom metal layer of the metal interconnection structure; an electrostatic discharge protection component located under the welding plate and on the first surface of the substrate; and a silicon through hole located below the bottom metal layer, in connection with the bottom metal layer and across the electrostatic discharge protection component to have the welding plate electrically connected with the electrostatic discharge protection component wherein the other end of the silicon through hole exposes out of the second surface from the substrate. According to the semiconductor device of the invention, through the through hole across the substrate to have the electrostatic discharge protection component directly connected with the welding plate, no other through holes are needed, therefore, avoiding the consumption of the active region below the welding plate.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a semiconductor device and an electronic device. Background technique [0002] With the continuous development of semiconductor technology, the improvement of integrated circuit performance is mainly achieved by continuously shrinking the size of integrated circuit devices to increase its speed. Currently, the semiconductor industry has progressed to nanotechnology process nodes in pursuit of high device density, high performance, and low cost. However, this progressive trend has a negative impact on the reliability of end products: In the field of semiconductor technology, the electrostatic discharge (ESD) phenomenon is a major threat to integrated circuits, which can break down integrated circuits and semiconductor components, causing Component aging reduces production yield. Therefore, ESD protection devices are regarded as one of the indispensable elements in...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/48H01L27/02
CPCH01L27/0248H01L23/481
Inventor 叶菲李海艇黄河
Owner SEMICON MFG INT (SHANGHAI) CORP