A kind of surface treatment device and surface treatment method of diamond wire cutting silicon wafer

A diamond wire and surface treatment technology, which is applied in metal processing equipment, machine tools suitable for grinding workpiece planes, grinding workpiece supports, etc., can solve problems such as periodic cutting scratches, and achieve surface treatment efficiency improvement, high efficiency and stability The effect of fixing and saving processing costs

Inactive Publication Date: 2018-10-26
朱胜利
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the technical problem of periodic cutting scratches on the surface of existing diamond wire-cut silicon wafers, the present invention provides a surface treatment device and surface treatment method for diamond wire-cut silicon wafers

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of surface treatment device and surface treatment method of diamond wire cutting silicon wafer
  • A kind of surface treatment device and surface treatment method of diamond wire cutting silicon wafer
  • A kind of surface treatment device and surface treatment method of diamond wire cutting silicon wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] see figure 1, the present embodiment is a surface treatment device for diamond wire-cut silicon wafers, the structure of which includes two oppositely disposed abrasive racks 1 and an abrasive tank 2 with an open top, and the abrasive tank 2 is filled with abrasive particle suspension 3 . The abrasive frame 1 includes a motion control arm 4 and an adsorption device 5 fixed at one end of the motion control arm 4 , the adsorption device 5 is used to adsorb and fix a diamond wire-cut silicon wafer 6 to be processed.

[0049] see figure 2 In this embodiment, the more preferred structure of the adsorption device 5 includes an adsorption disc 51 and an abrasive disc 52 connected as one, an adsorption cavity 53 is formed between the adsorption disc 51 and the abrasive disc 52, and one end of the adsorption disc 51 and the motion control arm 4 Fixed connection. Such as image 3 As shown, the surface of the abrasive disk 52 is provided with a plurality of adsorption holes 54...

Embodiment 2

[0051] see Figure 4 , the present embodiment is another surface treatment device for diamond wire-cut silicon wafers. Its structure includes two oppositely arranged first abrasive racks 11, second abrasive racks 12 and an abrasive tank 2 with an open top. Filled with abrasive particle suspension 3. The first abrasive frame 11 includes a motion control arm 4 and an adsorption device 5 fixed at one end of the motion control arm 4 , the adsorption device 5 is used to adsorb and fix the diamond wire-cut silicon wafer 6 to be processed. An abrasive device 7 is installed on the second abrasive frame 12 . Such as Figure 5 As shown, the abrasive device 7 in this embodiment is provided with a flat abrasive surface 71 ( Figure 5 for Figure 4 B-direction view of the medium abrasive device). In actual use, the abrasive device 7 can be fixed in the abrasive tank 2, and the diamond wire-cut silicon wafer 6 to be processed is closely attached to the abrasive surface 71, and an abras...

Embodiment 3

[0053] see Image 6 ( Image 6 for Figure 4 The B-direction view of the abrasive device in the middle), the difference between this embodiment and the second embodiment is that the abrasive device 7 has an abrasive surface 72 in the shape of a round roller. During the abrasive treatment, the abrasive surface 72 can rotate around its axis on the surface to be abrasive of the diamond wire-cut silicon wafer 6 .

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
particle diameteraaaaaaaaaa
particle diameteraaaaaaaaaa
Login to view more

Abstract

The invention belongs to the technical field of silicon wafer surface treatment, in particular to a surface treatment device and surface treatment method for diamond wire cutting silicon wafer. The surface treatment device includes a top opening abrasive groove and two abrasive frames disposed in relative settings which are called a first abrasive frame and a second abrasive frame. The abrasive groove is filled with abrasive particles suspension. The first abrasive frame is provided with an adsorption device, and the second abrasive frame is provided with an abrasion device or the adsorption device. The adsorption device is used for adsorbing and fixing the diamond wire cutting silicon wafer to be processed, and the abrasion device is provided with a flat or a round roll shaped abrasion surface. By preparing the abrasive particles suspension, the abrasion surface of the diamond wire cutting silicon wafer is treated by the irregular edges of abrasive particles. The surface treatment device and surface treatment method for diamond wire cutting silicon wafer are completely processed by mechanical abrasion without using strong corrosive acid, alkali and other chemical substances. Therefore, the surface treatment device and the surface treatment method for diamond wire cutting silicon wafer have the advantages of safety, environmental protection and high treatment efficiency.

Description

technical field [0001] The invention belongs to the technical field of silicon wafer surface treatment, and in particular relates to a surface treatment device and a surface treatment method for diamond wire-cut silicon wafers. Background technique [0002] Crystalline silicon wafers have been widely used in technical fields such as semiconductors, liquid crystal displays, and solar cells because of their excellent electrical properties. With the rapid development of the photovoltaic industry, the demand for crystalline silicon wafers is also increasing year by year. At present, the cutting process of crystalline silicon wafers mainly adopts the mortar wire cutting technology or the diamond wire cutting technology. [0003] Mortar wire cutting technology uses high-speed moving steel wire to drive the silicon carbide particles in the mortar to roll and grind to cut silicon wafers. This cutting method generally has the defects of slow cutting speed and low wafer forming effic...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): B24B7/22B24B41/06B24B57/00
CPCB24B7/228B24B41/06B24B57/00
Inventor 朱胜利
Owner 朱胜利
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap