Method of selective recovery of valuable metals from mixed metal oxides

A technology of mixtures and organic halides, applied in the direction of process efficiency improvement, photographic process, electrodes, etc., can solve the problems of high material cost and large amount of waste, achieve the effect of reducing cost and energy consumption requirements, and reducing environmental impact
CN104862482AInactive Publication Date: 2015-08-26NANO & ADVANCED MATERIALS INST

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
NANO & ADVANCED MATERIALS INST
Publication Date
2015-08-26
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
Patent Text Reader

Abstract

The present invention relates to a process for recovering metals from indium tin oxide (ITO) scrap. It allows the selective recovery of indium and tin from waste ITO by means of a simple and environmentally benign dissolution-deposition method, with no requirement of using strong corrosive acid / alkaline chemicals (e.g. hydrochloric acid, nitric acid, sulfuric acid and sodium hydroxide) for dissolution and complicated procedures / operation. The dissolution baths can be reused without observable recovery deterioration. It significantly reduces the cost requirement in the recovery process.
Need to check novelty before this filing date? Find Prior Art

Description

[0001] Cross References to Related Applications

[0002] This application claims priority to US Provisional Patent Application Serial No. 61 / 966,180, filed February 18, 2014, the disclosure of which is incorporated herein by reference in its entirety. technical field

[0003] The present invention relates to a method of selectively recovering indium and tin from ITO waste by continuous dissolution and deposition, which relates to the method and bath formulation of selectively dissolving indium and tin from ITO waste and how to collect indium and tin from the solution. Background technique

[0004] Indium is an important element in electronics and energy-related industries. Its compound indium oxide (In 2 o 3 ) play an important role in transparent conducting oxides (TCOs), which are fundamental materials used in flat-panel displays, solar cells, and other devices. Due to its increased demand and difficulty in extraction, shortages and price increases for indium are expect...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More