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Crucible device

A crucible and crucible cover technology, which is applied in the directions from condensing steam, single crystal growth, polycrystalline material growth, etc., can solve the problems of large radial temperature gradient of the crucible cover, etc., achieve fast transfer speed, reduce thermal stress, reduce Effects of Radial Temperature Gradients

Active Publication Date: 2017-05-10
珠海鼎泰芯源晶体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to solve the problem of large radial temperature gradient of the crucible cover, and to provide a crucible device that can improve the heating uniformity of the seed crystal

Method used

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Examples

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Embodiment Construction

[0022] Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their detailed descriptions will be omitted.

[0023] see figure 1 , figure 2 and image 3 . figure 1 It is a structural schematic diagram of an embodiment of the crucible device of the present invention; figure 2 It is a structural schematic diagram of a crucible cover 2 in the crucible device of the present invention; image 3 yes figure 2 Sectional view along plane A-A.

[0024] Such as figure 1 , figure 2 and image 3 As shown, an embodiment of the crucib...

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Abstract

The invention provides a crucible device capable of improving the heating uniformity of seed crystals. The crucible device comprises a crucible body and a crucible cover, wherein the crucible body is barrel-shaped and comprises a barrel bottom, barrel walls and a top opening; the barrel bottom and the barrel walls are encircled into a containing space for containing materials; the crucible cover covers the top opening of the crucible body and comprises an inner surface towards the barrel bottom and an outer space deviating from the barrel bottom; a hollow part is arranged in a central area of the crucible cover at least; the hollow part is positioned between the inner surface and the outer surface of the crucible cover; and a filler of which the heat conductivity coefficient is higher than that of the crucible cover fills the hollow part. According to the crucible device disclosed by the invention, a radial temperature gradient of the crucible cover is reduced, the overall temperature uniformity of the crucible cover is effectively improved, good conditions can be provided for enabling silicon carbide seed crystals arranged in the center of the inner surface of the crucible cover to produce into crystals, the radial temperature uniformity of the seed crystal is improved, and the thermal stress in the crystal growth process is reduced, so that crystals with higher quality can be grown.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a crucible device for growing silicon carbide crystals by a PVT method. Background technique [0002] As a new type of wide-bandgap semiconductor material, silicon carbide has attracted extensive attention. It is better than traditional sapphire and silicon in high temperature, high frequency and high power applications. The characteristics of silicon carbide mainly include high melting point, high electrical conductivity, high thermal conductivity and high voltage resistance, so it has become a high frequency and high power It is an important material for devices and is widely used in important fields such as aviation, aerospace, rockets, and geological drilling. [0003] At present, the physical vapor transport method (PVT method) is generally used to grow silicon carbide single crystals. The silicon carbide seed crystal is attached to the lid of the graphite crucible. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/36C30B23/00
CPCC30B23/00C30B29/36
Inventor 杨翠柏方聪陈丙振杨光辉
Owner 珠海鼎泰芯源晶体有限公司
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