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Method for manufacturing TFT substrate, organic EL display device, and liquid crystal display device

A manufacturing method and substrate technology, which are applied to lighting devices, chemical instruments and methods, organic cleaning compositions, etc., can solve problems such as increased use, and achieve the effects of excellent peeling solution resistance, improved peeling and removability, and high sensitivity.

Inactive Publication Date: 2020-01-03
FUJIFILM CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Dimethyl sulfide exists in low concentrations in nature, but if dimethyl sulfide is locally produced in high concentrations by the reduction of dimethyl sulfoxide, there is concern about its high toxicity to organisms
Against these backgrounds, the use of stripping solutions that do not use DMSO has increased

Method used

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  • Method for manufacturing TFT substrate, organic EL display device, and liquid crystal display device
  • Method for manufacturing TFT substrate, organic EL display device, and liquid crystal display device
  • Method for manufacturing TFT substrate, organic EL display device, and liquid crystal display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1~ Embodiment 84 and comparative example 1~ comparative example 68

[0619] After forming an organic film on a TFT substrate using curable compositions shown in Table 3 to Table 10, ITO or SiN x Any of them was used as an inorganic film, and a resist layer was further formed to prepare samples of Examples 1 to 84 and Comparative Examples 1 to 68. Then, using the stripping liquid composition having the composition shown in Table 11 to Table 18, the samples of these respective examples or comparative examples were stripped and removed of the resist layer, and the resist layer residue (etching) was carried out. residue) evaluation.

[0620] The stripping liquid composition used was prepared as follows. In addition, sensitivity, stripping liquid resistance, and etching residue were evaluated as mentioned later.

[0621] [table 3]

[0622]

[0623] [Table 4]

[0624]

[0625] [table 5]

[0626]

[0627] [Table 6]

[0628]

[0629] [Table 7]

[0630]

[0631] [Table 8]

[0632]

[0633] [Table 9]

[0634]

[0635] [Table...

Embodiment 101

[0702] In Japanese Patent No. 3321003 figure 1 In the active matrix type liquid crystal display device described in , the cured film 17 was formed as an interlayer insulating film in the following manner, and the liquid crystal display device of Example 101 was obtained. That is, using the curable composition of Example 1, cured film 17 was formed as an interlayer insulating film. Furthermore, after patterning the pixel electrode 4 of the upper layer of the cured film 17 through an etching resist, the said etching resist was peeled and removed using the stripping liquid composition of Example 1 after that.

[0703] As a result of applying a drive voltage to the obtained liquid crystal display device, it was found that it exhibited favorable display characteristics and was a highly reliable liquid crystal display device.

Embodiment 102

[0705] Only the following coating process was changed to obtain the same liquid crystal display device as in Example 101. That is, after applying the curable composition of Example 1 by the slit coating method, heating was performed on a hot plate at 90° C. for 120 seconds to remove the solvent and form a curable composition layer with a film thickness of 3.0 μm. . The obtained coating film was flat and had a good surface shape without unevenness. In addition, the performance as a liquid crystal display device was also good as in Example 101.

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Abstract

The object of the present invention is to provide a TFT substrate, an organic EL display device, and a liquid crystal with less resist residue on the surface of the organic film after peeling and removing the resist layer on the inorganic film provided on the organic film. A method of manufacturing a display device. The manufacturing method of the TFT substrate of the present invention at least sequentially includes step 1: using a curable composition represented by a specific composition a to form an organic film on the TFT substrate; step 2: forming at least a part of the organic film Step 3: forming a resist layer on the inorganic film; Step 4: exposing the resist layer and developing it with an aqueous developer; Step 5: via a step of etching the inorganic film with the developed resist layer; and step 6: a step of stripping and removing the resist layer using a stripper composition represented by the specific composition b.

Description

technical field [0001] The invention relates to a manufacturing method of a TFT substrate. In addition, the present invention relates to an organic electroluminescence (EL) display device and a manufacturing method thereof, and a liquid crystal display device and a manufacturing method thereof. Background technique [0002] In an organic EL display device, a liquid crystal display device, or the like, a patterned interlayer insulating film is provided on a substrate including a thin film transistor (Thin Film Transistor, TFT) element. The reason why a curable composition is widely used in forming the interlayer insulating film is that the number of steps required to obtain a desired pattern shape is small and sufficient flatness can be obtained. [0003] In the interlayer insulating film in the display device, in addition to the physical properties of the cured film such as insulation, solvent resistance, heat resistance, hardness, and indium tin oxide (Indium Tin Oxide, IT...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/039G02F1/1333G03F7/004G03F7/42H01L51/50H05B33/02H05B33/10
CPCG02F1/1333G03F7/004G03F7/039G03F7/42H05B33/02H05B33/10C11D3/2068C11D3/28C11D3/30C11D3/32G03F7/20H10K59/1213C11D2111/22H10K50/00
Inventor 霜山达也
Owner FUJIFILM CORP