Preparation method for heterogeneous Ge-based plasma pin diode used for manufacturing dipole antenna
A dipole antenna and plasma technology, which is applied in the field of ion pin diode preparation, can solve the problems of low integration, high implant dose and energy, and influence on solid-state plasma concentration, so as to improve injection efficiency and current, and improve breakdown The effect of voltage
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Embodiment 1
[0054] See figure 1 , figure 1 It is a schematic structural diagram of a reconfigurable dipole antenna according to an embodiment of the present invention. The dipole antenna includes a semiconductor substrate GeOI, a Ge-based plasma pin diode antenna arm, a coaxial feeder line and a DC bias line, and the Ge-based plasma pin diode antenna arm is sequentially connected end to end by a plurality of Ge-based plasma pin diodes form a plasma pin diode string, see figure 2 , figure 2 It is a flow chart of the preparation method of the heterogeneous Ge-based plasma pin diode, and the preparation method of the Ge-based plasma pin diode comprises:
[0055] (a) selecting a GeOI substrate with a certain crystal orientation, and setting an isolation region in the GeOI substrate;
[0056] (b) etching the GeOI substrate to form a P-type trench and an N-type trench, and the depth of the P-type trench and the N-type trench is less than the thickness of the top layer Ge of the GeOI subst...
Embodiment 2
[0100] See Figure 3a-Figure 3r , Figure 3a-Figure 3r It is a schematic diagram of a preparation method of a heterogeneous Ge-based plasma pin diode according to an embodiment of the present invention. On the basis of the first embodiment above, to prepare a GeOI-based solid-state plasma with a channel length of 22 nm (the length of the solid-state plasma region is 100 microns) The pin diode is used as an example to describe in detail, and the specific steps are as follows:
[0101] Step 1, substrate material preparation steps:
[0102] (1a) if Figure 3a As shown, the (100) crystal orientation is selected, the doping type is p-type, the doping concentration is a GeOI substrate 101 of 1014 cm-3, and the thickness of the top layer Ge is 50 μm;
[0103] (1b) if Figure 3b As shown, a first SiO2 layer 201 with a thickness of 40nm is deposited on a GeOI substrate by chemical vapor deposition (Chemical vapor deposition, CVD for short);
[0104] (1c) Depositing a first Si3N4 / S...
Embodiment 3
[0131] Please refer to Figure 4 , Figure 4 It is a schematic diagram of a device structure of a heterogeneous Ge-based plasmonic pin diode according to an embodiment of the present invention. The heterogeneous Ge-based plasmonic pin diode employs the above-mentioned as figure 1 The preparation method shown is made, specifically, the Ge-based plasma pin diode is prepared and formed on the GeOI substrate 301, and the P region 304, the N region 305 of the pin diode and the lateral position between the P region 304 and the N region 305 The I regions in between are located in the top layer Ge302 of the GeOI substrate. Wherein, the pin diode can be isolated by STI deep trenches, that is, an isolation trench 303 is provided outside the P region 304 and the N region 305, and the depth of the isolation trench 303 is greater than or equal to the thickness of the top layer Ge302.
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