Method of forming fin-type field effect transistor

Abstract

A method of forming a fin-type field effect transistor comprises: forming a first etch hole that exposes a first source region and a first drain region surface in a dielectric layer, and a second etch hole exposing a second source region and a second drain region; forming a second oxide layer containing aluminum on the side wall and the bottom surface of the second etch hole; forming a first oxide layer containing sulfur or selenium on the side wall and the bottom surface of the first etch hole; performing annealing such that sulfur ions or selenium ions in the first oxide layer containing sulfur or selenium diffuse into the first source region and the first drain region at the bottom of the first etch hole, aluminum ions in the second oxide layer containing aluminum diffuse into the second source region and the second drain region at the bottom of the second etch hole; and removing the first oxide layer and the second oxide layer, forming a first metal silicide on the surfaces of the first source region and the first drain region, and forming a second metal silicide layer on the surfaces of the second source region and the second drain region. The method of the present invention reduces the Schottky barrier height of the fin-type field effect transistor source-drain region.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a fin field effect transistor. Background technique [0002] In the present invention, with the continuous development of semiconductor process technology, the process node is gradually reduced, and the gate-last process is widely used to obtain an ideal threshold voltage and improve device performance. However, when the feature size (CD, Critical Dimension) of the device is further reduced, even if the gate-last process is adopted, the structure of the conventional MOS field effect transistor can no longer meet the requirements for device performance, and the fin field effect transistor (Fin FET) as Substitution of conventional devices has received extensive attention. [0003] A method for forming a Fin Field Effect Transistor in the prior art includes: providing a semiconductor substrate on which protruding fins are formed, and the fins are gene...

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Problems solved by technology

[0004] The performance of the existing fin field effect transistors still needs to be improved

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