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A kind of preparation method of microwave attenuation film for klystron
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A microwave attenuation and practical technology, which is applied to circuit components, metal processing equipment, transportation and packaging of time-of-flight electronic tubes, can solve the problems of reducing klystrons, etc., and achieve excellent attenuation performance, high temperature resistance, and assembly Distribution ratio scientifically reasonable effect
Active Publication Date: 2019-07-05
NANJING SANLE GROUP
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[0007] The existing microwave attenuating film cannot meet the above requirements. Therefore, it is necessary to design and develop a scientific and reasonable component ratio on the basis of the existing technology, without falling off or cracking, and without changing the attenuation performance. The preparation method of the microwave attenuation film for the klystron that can obviously reduce the Q value of the oxygen-free copper cavity of the klystron
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Embodiment 1
[0035] A kind of preparation method of microwave attenuation film for klystron, it comprises the following steps:
[0036] (1) First take the mixed powder of Fe, Ni and Cu, the weight ratio of Fe, Ni and Cu is 1:1:1. Add nitrocellulose solution and diethyl oxalate solution, mix well to prepare a paste, and then apply it on the inner surface of the oxygen-free copper cavity of the klystron to obtain the first layer of FeNiCu coating layer with a thickness of 0.1mm;
[0037] (2) Take FeSiAl powder (weight ratio of Fe, Si, Al is 85:9.6:5.4), FeSiAl, Fe, Ni weight ratio is 5:1:1, add nitrocellulose solution and diethyl oxalate solution to prepare Form a paste, then be coated on the first layer of FeNiCu coating layer, make the second layer of FeSiAl coating layer, the thickness of the second layer of FeSiAl coating layer is 0.4mm;
[0038] (3) Sintering is then carried out in a hydrogenatmosphere, the sintering temperature is 1020° C., the temperature is kept for 60 minutes, and...
Embodiment 2
[0043] A kind of preparation method of microwave attenuation film for klystron, it comprises the following steps:
[0044] (1) First take the mixed powder of Fe, Ni and Cu, the weight ratio of Fe, Ni and Cu is 1:1:1. Add nitrocellulose solution and diethyl oxalate solution, mix well to prepare a paste, and then apply it on the inner surface of the oxygen-free copper cavity of the klystron to obtain the first layer of FeNiCu coating layer with a thickness of 0.2mm;
[0045] (2) Take FeSiAl powder (weight ratio of Fe, Si, Al is 85:9.6:5.4), FeSiAl, Fe, Ni weight ratio is 5:1:1, add nitrocellulose solution and diethyl oxalate solution to prepare Form paste, then be coated on the first layer of FeNiCu coating layer, make the second layer of FeSiAl coating layer, the thickness of the second layer of FeSiAl coating layer is 0.6mm;
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Abstract
The invention discloses a method for preparing a microwave attenuation film for a klystron. The invention uses FeSiAl powder as the main material, iron powder, nickelpowder and copperpowder as the additive phase, and simultaneously adds nitrocellulose solution and diethyl oxalate to prepare a paste , and coated with the inner surface of the oxygen-free copper cavity, and sintered in hydrogen to prepare a microwave attenuation film. The preparation method of microwave attenuation film for klystron according to the present invention has strong operability and reasonable process design, especially through a large number of experiments to screen out the weight percentages of Fe, Ni, Cu powders and Fe, Si, and Fe in FeSiAl powders. The weight ratio of Al, and through a large number of experiments to screen out the best sintering process, the entire process design is reasonable, strong operability. The prepared microwave attenuating film is not easy to fall off and crack, has good high temperature resistance and excellent attenuation performance, and can significantly reduce the Q value of the cavity.
Description
technical field [0001] The invention designs a preparation method of a klystron, and in particular relates to a preparation method of a microwave attenuation film for a klystron. Background technique [0002] Klystron is currently one of the main military high-power microwave amplifier devices, and has been widely used in radar, communication, and electronic countermeasure research. Among them, the main function of the key attenuating film material used in the klystron is to place the attenuating coating in the form of a film in the resonant cavity, and to increase the "weekly energy consumption" by absorbing microwaves, that is, to The role of loading, through loading, reduces the quality factor Q of the resonant cavity, so that the operating frequency band of the resonant cavity is effectively broadened. [0003] This kind of microwave attenuating film must meet the requirements of klystron manufacturing process: [0004] 1) It can withstand the welding temperature of 90...
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