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High-frequency low-loss manganese zinc ferrite and manufacture method thereof

A technology of manganese zinc ferrite and its manufacturing method, which is applied in the direction of magnetic objects, magnetic materials, electrical components, etc., can solve the problems of increasing the resistance of domain wall movement, etc., and achieve less pores, fine and uniform grain structure, and high frequency Effect of Loss Reduction

Inactive Publication Date: 2017-06-09
东莞易力禾电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At IF, P e The proportion of the increase, to reduce the total loss, can be suppressed by increasing the material resistivity method e The increase of the CaO-SiO can be used at this time 2 Compound doping forms a high-resistance layer at the grain boundary to suppress P e However, the grain boundary layer will increase the resistance of domain wall motion, so that P h increase, so it is necessary to comprehensively consider the effect of process conditions on P h and P e different effects of

Method used

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  • High-frequency low-loss manganese zinc ferrite and manufacture method thereof
  • High-frequency low-loss manganese zinc ferrite and manufacture method thereof
  • High-frequency low-loss manganese zinc ferrite and manufacture method thereof

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Effect test

Embodiment 1

[0030] Use Fe in the main material 2 o 3(Bao Steel Red) 54mol%, ZnO (Jinghua Zinc) 6mol%, MnO (Hunan Jinrui Manganese, converted to Mn 3 o 4 ) 40mol%, mixing time in a ball mill for 30 minutes, holding time in a sintering furnace at 900°C for 2 hours; adding auxiliary material dispersant 0.5wt%, defoamer 1wt% and polyvinyl alcohol binder 2wt% after secondary ball milling The time is 1 hour to make powder; add trace additive 50ppm SiO 2 、3000ppm CaCO 3 , 150ppm Nb 2 o 5 , 1000ppm TiO 2 、350ppm V 2 o 5 , 150ppm ZrO 2 , 80ppm HfO 2 , spray granulation, use a press to press the granulated powder into a blank and put it in a microwave atmosphere sintering furnace for secondary sintering to obtain a high-frequency and low-power manganese-zinc ferrite material. Among them, the secondary sintered The sintering temperature is 1150°C, and the sintering is held at 3% oxygen partial pressure for 1 hour. When the temperature is lowered, the cooling temperature and oxygen partial...

Embodiment 2

[0034] The main material uses Fe 2 o 3 (Bao Steel Red) 56mol%, ZnO (Jinghua Zinc) 5mol%, MnO (Hunan Jinrui Manganese, converted to Mn 3 o 4 ) 39mol%, mixing time in a ball mill for 30 minutes, holding time in a sintering furnace at 910°C for 2 hours; adding auxiliary materials dispersant 0.5wt%, defoamer 1wt% and polyvinyl alcohol binder 2wt% after secondary ball milling The time is 1 hour to make powder; add trace additive 50ppm SiO 2 , 2500ppm CaCO 3 , 150ppm Nb 2 o 5 , 500ppm TiO 2 、300ppm V 2 o 5 , 150ppm ZrO 2 , 100ppm Ta 2 o 5 , spray granulation, use a press to press the granulated powder into a blank and put it in a microwave atmosphere sintering furnace for secondary sintering to obtain a high-frequency and low-power manganese-zinc ferrite material. Among them, the secondary sintered The sintering temperature is 1160°C, and the sintering is held at 3% oxygen partial pressure for 1 hour. When the temperature is lowered, the cooling temperature and oxygen pa...

Embodiment 3

[0038] The main material uses Fe 2 o 3 (Bao Steel Red) 57mol%, ZnO (Jinghua Zinc) 6mol%, MnO (Hunan Jinrui Manganese, converted to Mn 3 o 4 ) 37mol%, mixed in a ball mill for 30 minutes, held in a sintering furnace at 920°C for 2 hours; added auxiliary materials dispersant 0.5wt%, defoamer 1wt% and polyvinyl alcohol binder 2wt% after secondary ball milling The time is 1 hour to make powder; add trace additive 50ppm SiO 2 、2000ppm CaCO 3 , 250ppm Nb 2 o 5 , 500ppm TiO 2 、300ppm V 2 o 5 , 200ppm ZrO 2 , 120ppm Ta 2 o 5 , spray granulation, use a press to press the granulated powder into a blank and put it in a microwave atmosphere sintering furnace for secondary sintering to obtain a high-frequency and low-power manganese-zinc ferrite material. Among them, the secondary sintered The sintering temperature is 1170°C, and the sintering temperature is kept at 3% oxygen partial pressure for 1 hour. When the temperature is lowered, the cooling temperature and oxygen partia...

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Abstract

The invention discloses high-frequency low-loss manganese zinc ferrite and a manufacture method thereof; the manufacture method comprises: weighing the main materials at a molar ratio, mixing in a ball mill, sintering in a sintering furnace at 850-980 DEG C, and holding the temperature for 1-3 hours to obtain pre-sintered material; ball-milling for the second time, adding auxiliaries into the pre-sintered material, and ball-milling to form powder; adding first and second additives, and granulating with a machine; press-forming powder with the granulated material by using a press, and sintering for the second time, the formed blanks in an atmospheric sintering furnace to obtain the high-frequency low-loss manganese zinc ferrite. By adjusting the component ratio of the main materials, auxiliaries and additives and using microwave sintering technique, manganese zinc ferrite capable of high-power transmission under high frequency is acquired; the manganese zinc ferrite has small and uniform crystal grain structure, has few pores, and high crystal boundary resistivity, and accordingly has greatly reduced high-frequency loss, with high-temperature stability of a transformer greatly improved.

Description

technical field [0001] The invention relates to the technical field of soft magnetic and low power consumption materials, in particular to a high-frequency low-loss manganese-zinc ferrite and a manufacturing method thereof. Background technique [0002] The development trend of modern electronic technology is to provide users with smaller and more energy-saving electronic equipment. For this reason, switching power supplies with smaller volume and higher efficiency are required. Significantly increasing the switching frequency is a feasible way to achieve the above requirements, and the required high frequency can be obtained by using the circuit of gallium nitride GaN. [0003] 2016 is the year of the outbreak of GaN. Many large international companies such as EPC, TI, Navitas, etc. have recently launched GaN-based power drive and control chips. With the maturity of the new generation of electronic switching tube technology, the switching power supply system The frequency ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/26C04B35/64H01F1/34
CPCC04B35/2633C04B35/265C04B35/64C04B2235/3208C04B2235/3225C04B2235/3232C04B2235/3239C04B2235/3244C04B2235/3251C04B2235/3262C04B2235/3284C04B2235/3418C04B2235/661C04B2235/667C04B2235/77H01F1/344
Inventor 尧巍华宋秀鹏
Owner 东莞易力禾电子有限公司
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