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Vertically structured ZnMgO self-driven solar blind UV photodetector area array and preparation method thereof

A vertical structure, electrical detector technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of low stability, difficult preparation of pn junction ZnMgO solar-blind ultraviolet photodetectors, etc., to enhance performance and achieve imaging and tracking, improving collection efficiency

Inactive Publication Date: 2017-06-13
FUJIAN AGRI & FORESTRY UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] The purpose of the present invention is to solve the problems of low stability of p-type ZnMgO materials and difficulties in the preparation of pn junction type ZnMgO solar-blind ultraviolet photodetectors, and use p-type NiMgO materials instead of p-type ZnMgO materials to provide a vertical structure ZnMgO self-driven solar-blind photodetector. Ultraviolet photodetector area array and its preparation method

Method used

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  • Vertically structured ZnMgO self-driven solar blind UV photodetector area array and preparation method thereof
  • Vertically structured ZnMgO self-driven solar blind UV photodetector area array and preparation method thereof

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Embodiment 1

[0030] See attached figure 2 , using the magnetron sputtering coating method to grow a layer of ultra-wide bandgap, high carrier concentration doped Zn on the quartz substrate 1 x Mg 1-x O thin film is used as the transparent conductive window layer 2, and the doped impurity element is Al, and ZnO target, MgO target and Al 2 o 3 The targets are Zn source, Mg source and Al doping source respectively, the sputtering power is 50W, 100W and 30W respectively, and the grown Zn x Mg 1- x O thin film is used as the transparent conductive window layer 2, which is obtained through experiments: the value of x in the formula is 0.48, the bandgap width is 5.1eV, and the carrier concentration is 2×10 19 / cm 3 (See figure 2 Process a) in the process; continue to use the magnetron sputtering coating method to grow a layer of sun-blind bandgap, low carrier concentration doped Zn y Mg 1-y The O thin film is used as the n-type layer 3, and the doped impurity element is Al, and ZnO tar...

Embodiment 2

[0032] See attached figure 2 , using the pulsed laser deposition coating method to grow a layer of ultra-wide bandgap, high carrier concentration doped Zn on the alumina substrate 1 x Mg 1-x The O thin film is used as the transparent conductive window layer 2, and the doped impurity element is In, using ZnO target, MgO target and In 2 o 3 The targets are Zn source, Mg source and In doping source respectively, and the energy density of the pulsed laser source is 1.7 J / cm 2 、2.0J / cm 2 and 0.7J / cm 2 , the grown Zn x Mg 1-x O thin film is used as the transparent conductive window layer 2, which is obtained through experiments: the value of x in the formula is 0.45, the bandgap width is 5.3eV, and the carrier concentration is 1.5×10 19 / cm 3 (See figure 2 Process a) in the process; continue to use the pulsed laser deposition coating method to grow a layer of sun-blind bandgap, low carrier concentration doped Zn y Mg 1-y The O thin film is used as the n-type layer 3, an...

Embodiment 3

[0034] See attached figure 2 , using the magnetron sputtering coating method to grow a layer of ultra-wide bandgap, high carrier concentration doped Zn on the alumina substrate 1 x Mg 1-x O thin film is used as the transparent conductive window layer 2, and the doped impurity element is Ga, and ZnO target, MgO target and Ga 2 o 3 The targets are Zn source, Mg source and Ga doping source respectively, the sputtering power is 45W, 100W and 30W respectively, and the grown Zn x Mg 1- x O thin film is used as the transparent conductive window layer 2, which is obtained through experiments: the value of x in the formula is 0.44, the bandgap width is 5.4eV, and the carrier concentration is 1.1×10 19 / cm 3 (See figure 2 Process a) in the process; continue to use the magnetron sputtering coating method to grow a layer of sun-blind bandgap, low carrier concentration doped Zn y Mg 1-y The O thin film is used as the n-type layer 3, and the doped impurity element is Ga, and ZnO ta...

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Abstract

The invention discloses a vertically structured ZnMgO self-driven solar blind UV photodetector area array and a preparation method thereof, specifically refers to the mixed ZnxMg1-xO thin film layer of ultra-broad band gap and high carrier concentration grown on the transparent substrate to be used as a transparent conductive window layer; another mixed ZnyMg1-yO thin film layer of solar-blind band gap and low carrier concentration is grown to be used as a n-type layer; then a layer of NizMg1-zO film is further grown to be used as a p-type layer; part of the p-type and the n-type layers are etched away, to expose part of the transparent conductive window layer; n-type ring shape annular common electrodes are prepared on the exposed transparent conductive window layer, p-type array electrodes are prepared on the p-type layer; finally the vertically structured ZnMgO self-driven solar blind ultraviolet photodetector array is obtained. The self-driven detection of solar-blind ultraviolet is achieved by using ZnyMg1-yO / NizMg1-zO heterogeneous pn junction; the photoelectric properties of the device are greatly improved by utilizing the ultra-broad band gap and the transparent conductive window layer; the detector is a vertical structure, the area array fabrication is achieved by preparing the common electrodes and the array electrodes, and the photodetector area array and the preparation method are applied to the imaging and tracking of solar-blind ultraviolet signals.

Description

technical field [0001] The invention relates to a solar-blind ultraviolet photodetector array and a preparation method thereof, in particular to a vertical-structure ZnMgO self-driven solar-blind ultraviolet photodetector array and a preparation method thereof. Background technique [0002] The atmosphere has a strong absorption of sunlight in the 200-280 nm ultraviolet band, and the light in the 200-280 nm band is called solar-blind ultraviolet light. The absorption of solar-blind ultraviolet light by the atmosphere provides a natural low-background window for the detection of artificial solar-blind ultraviolet signals. A solar-blind ultraviolet photodetector refers to an ultraviolet detector that has a characteristic response to 200-280nm solar-blind light, but does not respond to 280-800nm ​​ultraviolet and visible light (Rikiya Suzuki, Shinji Nakagomi, and Yoshihiro Kokubuna, Appllied Physics Letters, 2011, 98:131114). At present, solar-blind ultraviolet detectors have...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/032H01L31/109H01L31/18
CPCH01L31/0321H01L31/109H01L31/18Y02P70/50
Inventor 郑清洪陈礼辉黄六莲欧阳新华杨海洋
Owner FUJIAN AGRI & FORESTRY UNIV
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