Method for improving light extraction from OLED light-emitting devices through optical films
A technology for optical thin films and light-emitting devices, which is applied in the manufacture of semiconductor devices, electrical solid-state devices, semiconductor/solid-state devices, etc., to achieve the effects of increased light extraction rate, low manufacturing cost, and improved light extraction efficiency
Active Publication Date: 2018-12-07
SHANGHAI UNIV
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Problems solved by technology
At present, the common optical films include: reflective film, anti-reflection film, filter film, anti-reflection film, diffusion film and polarizing film, etc., but there are no relevant reports and literature records on the application of optical thin film diffusion film to OLED preparation
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[0032] In this example, see figure 1 with image 3 , a method for improving the light extraction of an OLED light-emitting device through an optical film, characterized in that the steps are as follows:
[0033] a. Using a glass substrate as a substrate, sputtering high-conductivity ITO on the glass substrate with a thickness of 180nm as the anode electrode layer;
[0034] b. Evaporate MoO on the anode electrode layer prepared in the step a 3 , with a thickness of 5nm, used as an interface modification layer; its work function is between ITO and NPB, which can reduce the potential barrier between ITO and NPB, so that holes can be transported to the light-emitting layer more quickly, and the electron-hole compound rate;
[0035] c. On the interface modification layer prepared in the step b, the NPB layer with a thickness of 60nm and the Alq layer with a thickness of 60nm are successively evaporated. 3layer, a LiF layer with a thickness of 0.8nm and an Al layer with a thickn...
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The invention discloses a method for improving the light extraction of an OLED light-emitting device through an optical film. On the back of the glass of the prepared bottom-emitting organic electroluminescent device, a UV optical adhesive with a refractive index similar to that of the substrate and good in light transmission and non-absorbing is used. With an optical thin film diffusion film, the optical glue is cured after ultraviolet radiation, compared with a device with the same device structure without a diffusion film attached. In the path of light propagation, after light is reflected, refracted and scattered by the diffusion film, the light that was not taken out can be taken out from the device, thereby improving the efficiency of the device, and the current efficiency and brightness of the device are increased by more than 24%, and The chromaticity is stable, and there is no angle dependence phenomenon. The light emitting method of the present invention can be applied to large-area light emitting devices, and the optical film light emitting method has simple process, mature technology, stable performance and mass production.
Description
technical field [0001] The invention relates to a preparation method of an OLED light-emitting device, in particular to a method for improving light extraction of an OLED light-emitting device, which is applied in the technical field of organic electroluminescent devices. Background technique [0002] Organic electroluminescence device OLED has become a research hotspot in the field of optoelectronic display due to its excellent properties such as active light emission, wide viewing angle, uniform image quality, sensitive response, easy colorization, high brightness, rich colors, and easy fabrication. Factors restricting the luminous efficiency of OLED devices include the internal quantum conversion efficiency of the luminescent material, and another important reason is that the photons generated in the luminescent region are emitted through the transparent electrode to produce luminescence. When the photons pass through the organic layer and the transparent electrode, most o...
Claims
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IPC IPC(8): H01L51/52
CPCH10K50/85H10K50/858H10K50/86
Inventor 朱文清翟光胜石冠杰俞静婷张沛殷正元
Owner SHANGHAI UNIV