Device and method for increasing high-power microwave transmission device breakdown threshold value

A high-power microwave and transmission device technology, applied in waveguide-type devices, waveguides, electrical components, etc., can solve the problems of limiting system power capacity, HPM radiation power bottleneck, etc., to improve the breakdown threshold and improve the transmission breakdown threshold. Effect

Inactive Publication Date: 2017-06-13
NORTHWEST INST OF NUCLEAR TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The strong electromagnetic field breakdown of the HPM generation, transmission and launch system severely limits the power capacity of the system, which has become the bottleneck of HPM technology progress and an international technical challenge
In particular, the breakdown in the HPM transmission system is the bottleneck of the HPM radiated power

Method used

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  • Device and method for increasing high-power microwave transmission device breakdown threshold value
  • Device and method for increasing high-power microwave transmission device breakdown threshold value
  • Device and method for increasing high-power microwave transmission device breakdown threshold value

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Embodiment Construction

[0028] The present invention will be further described below in conjunction with the accompanying drawings.

[0029] In the present invention, Ti is firstly formed on the metal surface inside the circular waveguide through the magnetron sputtering method, and the grain size is on the order of hundreds of nanometers. a Zr b V c f d The porous alloy material thin film, the nanoporous alloy material can reduce the secondary electron emission yield of the circular waveguide wall in the high-power microwave experiment after being baked and activated in the vacuum background and the repetition frequency is mature, and can absorb the device in the experiment The gas escaping from the wall maintains a high vacuum inside the microwave system during the experiment, prevents the occurrence of breakdown, and increases the transmission breakdown threshold.

[0030] Since the nanoporous alloy material is exposed to the atmosphere, it will absorb a lot of gas and be passivated. After pass...

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Abstract

The invention discloses a high-power microwave transmission device and method for a high breakdown threshold value. The device comprises a circular waveguide with the inner surface plated with a nanometer porous alloy material, and movable gate type vacuum stop valves are arranged at the two ends of the circular waveguide; the circular waveguide is internally plated with the nanometer porous alloy material, the waveguide and gas in the microwave system can be adsorbed, surface plasma formation under the high-power microwave action is inhibited, and the high-power microwave system breakdown threshold value is increased. For the movable gate type vacuum stop valves, an innovative dynamic vacuum seal technology is used, the internal vacuum degree of a microwave system or the circular guide can be kept, the phenomenon that due to the fact that the nanometer porous alloy material plated on the inner surface is exposed in the atmosphere, passivation is caused, the problem that the nanometer porous alloy material plated on the surface is passivated and repeatedly activated is avoided, and the service life of the equipment under the high breakthrough threshold value is prolonged.

Description

technical field [0001] The invention belongs to the technical field of high-power microwaves, and in particular relates to a method for increasing the breakdown threshold of high-power microwave transmission devices. Background technique [0002] High Power Microwave (HPM) has very broad application prospects in the fields of scientific research, civil and national defense. The strong electromagnetic field breakdown of the HPM generation, transmission and launch system severely limits the power capacity of the system, which has become the bottleneck of HPM technology progress and an international technical challenge. In particular, the breakdown in the HPM transmission system is the bottleneck of the HPM radiated power. Among them, the device wall of the transmission system is caused by the electron-induced escape gas, which causes the internal pressure of the device to increase, and the vacuum degree of the microwave system decreases, which makes the plasma density avalanc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01P1/00H01P3/00C23C14/35C23C14/16
CPCC23C14/165C23C14/35H01P1/00H01P3/00
Inventor 常超桂猷猷伍成邵浩孙钧
Owner NORTHWEST INST OF NUCLEAR TECH
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