A resistance heater for a single crystal furnace and a method for preparing a silicon single crystal using the resistance heater

A resistance heater, single crystal furnace technology, applied in chemical instruments and methods, single crystal growth, single crystal growth and other directions, can solve the problem of difficult to obtain low oxygen content silicon single crystal, accelerate the melting speed of silicon material, and increase the heat at the bottom of the crucible supply and other problems, to achieve the effect of low oxygen content, reduced transport capacity, and reduced temperature gradient

Active Publication Date: 2019-06-18
山东有研半导体材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] In the melting stage, the "heater with thinned bottom" can reduce the risk of cracking the bottom of the quartz crucible and speed up the melting speed of the silicon material; but after the melting of the silicon material is completed, the "heater with a thinned bottom" in the subsequent crystal pulling process The "bottom thinning heater" cannot be turned off, which will virtually increase the heat supply at the bottom of the crucible. After the bottom of the crucible receives more heat, it will promote the flow of silicon melt, and it is difficult to obtain silicon single crystal with low oxygen content.

Method used

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  • A resistance heater for a single crystal furnace and a method for preparing a silicon single crystal using the resistance heater
  • A resistance heater for a single crystal furnace and a method for preparing a silicon single crystal using the resistance heater
  • A resistance heater for a single crystal furnace and a method for preparing a silicon single crystal using the resistance heater

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Using an existing resistance heater (which has a structure such as figure 1 As shown), configure heater A, fill the crucible with 50kg polycrystalline filler, melting power 75kw, seeding power 58kw, crucible rotates clockwise 6rpm, single crystal rotates counterclockwise 12rpm, furnace chamber pressure 20 Torr, pull at 1.2mm / min A silicon single crystal 1 with a diameter of 154-156 mm and a length of 1050 mm was prepared.

[0031] Cut a 2mm sample at the 25mm position of the head of the silicon single crystal a, and measure the oxygen content. The results are shown in Table 2.

Embodiment 2

[0033] Use the resistance heater (its structure such as figure 2 As shown), configure heater B, fill the crucible with 50kg polycrystalline filler, melting power 75kw, seeding power 58kw, crucible rotates clockwise 6rpm, single crystal rotates counterclockwise 12rpm, furnace chamber pressure 20 Torr, pull at 1.2mm / min A silicon single crystal b with a diameter of 154-156 mm and a length of 1050 mm was prepared.

[0034] Cut a 2mm sample piece at the 25mm position of the head of the silicon single crystal b, and measure the oxygen content. The results are shown in Table 2.

Embodiment 3

[0036] Use the resistance heater (its structure such as figure 2 As shown), configure heater C, fill the crucible with 50kg polycrystalline filler, melting power 75kw, seeding power 58kw, crucible rotates clockwise 6rpm, single crystal rotates counterclockwise 12rpm, furnace chamber pressure 20 Torr, pull at 1.2mm / min A silicon single crystal c with a diameter of 154-156mm and a length of 1050mm is produced.

[0037] Cut a 2mm sample at the 25mm position of the c head of the silicon single crystal, and measure the oxygen content. The results are shown in Table 2.

[0038] Table 2: Oxygen content in the head of a 16-inch heater growing a 6-inch silicon single crystal

[0039]

[0040]Compared with the thermal system of the existing resistance heater, the thermal system of the resistance heater configured with a 360° annular gap structure can reduce the oxygen content of the silicon single crystal head by more than 10% under the same crystal pulling conditions.

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PUM

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Abstract

The invention discloses a resistance heater for a single crystal furnace and a method of using the same to perform crystal pulling. The resistance heater comprises a cylindrical graphite heater, which is provided with interactive and evenly arranged grooves in the axial direction. Along the circumferential direction of the graphite heater, a 360-degree circular gap structure is arranged. The exterior of the graphite heater is provided with an enhanced heat-generating body. The enhanced heat-generating body is arranged on a position, wherein the distance between the upper end face of the graphite heater to the position accounts for 1 / 4-1 / 5 of the total height of the graphite heater. The method of using the resistance heater to pull crystals comprises the following steps: applying the resistance heater to a monocrystal furnace, making the cylindrical graphite heater surround a crucible, holding the enhanced heat-generating body above the silicon melt surface, and subjecting a polycrystalline silicon raw material to steps of melting, melt stabilizing, seeding, diameter enlarging, rotation increasing, isodiametric growth, ending, and cooling in the quartz crucible to obtain a monocrystal silicon rod with a low oxygen content. The provided heater and method can obtain a monocrystal silicon rod with a low oxygen content.

Description

technical field [0001] The invention relates to a resistance heater for a single crystal furnace and a method for preparing a single crystal by using the resistance heater, belonging to the technical field of silicon single crystal preparation. Background technique [0002] The development of semiconductor materials promotes the increase in the diameter of silicon single crystals, and silicon single crystals with a diameter of 200 mm and silicon single crystals with a diameter of 300 mm have become mainstream. As the diameter of silicon single crystal increases, a larger thermal system is required to keep the ratio of crystal diameter to crucible diameter at approximately 1 / 3, and to achieve high-efficiency production of silicon crystals while taking into account the balance of silicon crystal quality parameters. [0003] The heater made of high-purity graphite material or carbon / carbon composite material is the core component of the internal heating system of the single cry...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/18C30B29/06
CPCC30B15/18C30B29/06
Inventor 方峰王学锋邓德辉高朝阳曾泽红孙媛
Owner 山东有研半导体材料有限公司
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