LED full-color display device structure based on III-V-group nitride semiconductor and manufacturing method

Abstract

The invention provides an LED full-color display device structure based on an III-V-group nitride semiconductor and a manufacturing method. The LED full-color display device structure based on the III-V-group nitride semiconductor comprises an active matrix-driven silicon-based backplane, an LED micro pixel array, a first-conductivity type III-V-group nitride layer and color conversion films needed for color display, wherein the active matrix-driven silicon-based backplane comprises a plurality of driving units; the LED micro pixel array is located on the surface of the active matrix-driven silicon-based backplane and comprises a plurality of LED micro pixels; each LED micro pixel comprises a light emitting material layer and an anode, and the anode of each LED micro pixel is connected with the anode of the corresponding driving unit respectively; the light emitting material layer is located on the anode surface of the LED micro pixel; the first-conductivity type III-V-group nitride layer is located on the surface of the light emitting material layer of each LED micro pixel and connects each LED micro pixel; and the color conversion films needed for color display are located on the surface of the first-conductivity type III-V-group nitride layer. Each LED micro pixel and each color conversion film are connected through the first-conductivity type III-V-group nitride layer with a small thickness, the gap between adjacent LED micro pixels can be narrowed to improve the resolution, and mutual interference between adjacent color conversion films can be reduced.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a structure and a preparation method of an LED full-color display device based on group III-V nitride semiconductors. Background technique [0002] In recent years, with the continuous progress of III-V nitride (III-Nitride) semiconductor LED chip technology and production process, the continuous breakthrough of ultra-high brightness epitaxial wafers and key technologies for chip production and packaging, the cost is also continuously reduced. Nitride (III-Nitride) semiconductor LED pixel LED displays have become LCOS and OLED because of their excellent performance far exceeding liquid-crystal-on-silicon (LCOS) and organic semiconductor LED (Organic-LED, OLED). Another more technologically competitive and promising microdisplay technology. At present, one of the challenges faced by the display technology based on the nitride (III-Nitride) semiconductor LED arr...

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Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a LED full-color display device structure and preparation method based on III-V nitride semiconductors, which is used to solve the problems in the prior art due to the nitride (III- Nitride) semiconductor LED color display device structure adopts mutually separated and independent multiple LED chips, and the distance between all adjacent pixels is difficult to achieve very small, resulting in the problem of low resolution of the color display; because the tiny LED pixel device has the same A thicker LED chip substrate will cause obvious crosstalk in the full-color display structure of small-pitch pixels, which inevitably causes the problem of low resolution of color display, and the non-conductive chip substrate in The device structure requires that the current be transmitted laterally parallel to the surface of the LED chip substrate in the tiny LED pixel device, resulting in a higher device operating voltage and reducing the luminous efficiency of the pixels in the display; and due to the temporary storage of grayscale signals The drift of the gate voltage of the driving transistor caused by the MOS capacitor or the gate capacitance of the MOS transistor, which in turn causes the drift of the current flowing through the LED, resulting in a change in the brightness of the LED, so that the proper gray scale cannot be accurately restored.

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