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Semiconductor laser side-coupled axial pumped alkali metal laser

A side-coupling, alkali metal technology, applied in the laser field, can solve the problems of difficult to obtain mode matching, low laser optical efficiency, etc., and achieve the effect of low processing difficulty, long gain length, and good mode matching.

Active Publication Date: 2017-06-27
INST OF ELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This structure is difficult to obtain better mode matching, resulting in low optical efficiency of the laser

Method used

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  • Semiconductor laser side-coupled axial pumped alkali metal laser
  • Semiconductor laser side-coupled axial pumped alkali metal laser
  • Semiconductor laser side-coupled axial pumped alkali metal laser

Examples

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Effect test

Embodiment 1

[0045] Such as Figure 4 As shown, this embodiment proposes an alkali metal laser with semiconductor laser side-coupled axial pumping, including three semiconductor pump sources 1, an alkali metal vapor chamber 2 and a resonant cavity, and also includes three steering elements 5, The three steering elements 5 correspond to the three semiconductor pump sources 1 one by one, and are used to change the propagation direction of the pump light emitted by the three semiconductor pump sources; the pump light emitted by the three semiconductor pump sources is in the alkali metal The vapor chamber 2 ends up with paraxial light.

[0046] Wherein, the resonant cavity includes a reflecting mirror 3 and an output coupling mirror 4, and the alkali metal vapor chamber 2 is placed between the reflecting mirror 3 and the output coupling mirror 4; the three diverting elements 5 adopt a full-reflective concave mirror with a hole in the center , the diameter of the central hole is greater than t...

Embodiment 2

[0049] Such as Figure 5 As shown, this embodiment proposes an alkali metal laser with semiconductor laser side-coupled axial pumping, including five semiconductor pump sources 1, an alkali metal vapor chamber 2 and a resonant cavity, and also includes five steering elements 5, The five steering elements 5 correspond to the five semiconductor pump sources 1 one by one, and are used to change the propagation direction of the pump light emitted by the five semiconductor pump sources; the pump light emitted by the five semiconductor pump sources is in the alkali metal The vapor chamber 2 ends up with paraxial light.

[0050] Wherein, the resonant cavity includes a reflecting mirror 3 and an output coupling mirror 4, and the alkali metal vapor chamber 2 is placed between the reflecting mirror 3 and the output coupling mirror 4; the five diverting elements 5 adopt a full-reflective concave mirror with a hole in the center , the diameter of the central hole is greater than the size...

Embodiment 3

[0053] Such as Figure 6 As shown, this embodiment proposes an alkali metal laser with semiconductor laser side-coupled axial pumping, including 4 semiconductor pump sources 1, 1 alkali metal vapor chamber 2 and a resonant cavity, and also includes 4 steering elements 5, The four steering elements 5 correspond to the four semiconductor pump sources 1 one by one, and are used to change the propagation direction of the pump light emitted by the four semiconductor pump sources; the pump light emitted by the four semiconductor pump sources is in the alkali metal The vapor chamber 2 ends up with paraxial light. .

[0054] Wherein, the resonant cavity includes a reflecting mirror 3 and an output coupling mirror 4, and the alkali metal vapor chamber is placed between the reflecting mirror 3 and the output coupling mirror 4; the four diverting elements 5 adopt a full-reflective concave mirror with a hole in the center, The diameter of the central hole is greater than the size of the...

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Abstract

Disclosed is a semiconductor laser side-coupled axial pumped alkali metal laser, including n semiconductor pump sources, m alkali metal vapor chambers and a resonant cavity. The alkali metal laser further comprises n steering elements corresponding to the n semiconductor pump sources respectively for changing the propagation direction of the pump light emitted by the n semiconductor pump sources. Regardless of how the n steering elements are set, the pump light emitted by the n semiconductor pump sources is ultimately paraxial light in the m alkali metal vapor chambers, where n and m are natural numbers. The pump light emitted from the n semiconductor pump sources is changed in the propagation direction by the corresponding steering elements, and converging points are located at different positions in the alkali metal vapor chambers. According to the invention, the alkali metal laser realizes the large focal depth by the side coupling of multiple semiconductor laser pump modules and makes full use of the alkali metal vapor atoms in the alkali metal vapor chambers to achieve better pattern matching, thus realizing the cascade use of the multiple pump modules and achieving high power output.

Description

technical field [0001] The invention belongs to the technical field of lasers, and more specifically relates to an alkali metal laser with side-coupled axial pumping of a semiconductor laser. Background technique [0002] DPAL (Diode Pumped Alkali Vapor Laser) is a new type of optically pumped gas laser whose gain medium is alkali metal in vapor state. The temperature of the gain medium is usually 100-200°C. The gain medium of DPAL is mainly potassium, rubidium or cesium in the vapor state, and its energy level structure is as follows: figure 1 shown. n is the number of electron layers where the outermost electrons are located, and the n corresponding to K, Rb, and Cs are 4, 5, and 6, respectively. wxya 1 / 2 is the ground state energy level, nP 1 / 2 and nP 3 / 2 Excited state energy levels resulting from splitting for outermost electron spin-orbit interactions. The transitions from the ground state to the two upper energy levels correspond to the D1 and D2 lines, respectiv...

Claims

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Application Information

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IPC IPC(8): H01S3/03H01S3/091H01S3/227
CPCH01S3/031H01S3/091H01S3/227
Inventor 谭荣清黄伟李志永
Owner INST OF ELECTRONICS CHINESE ACAD OF SCI
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