Semiconductor laser side-coupled axial pumped alkali metal laser

A side-coupling, alkali metal technology, applied in the laser field, can solve the problems of difficult to obtain mode matching, low laser optical efficiency, etc., and achieve the effect of low processing difficulty, long gain length, and good mode matching.

Active Publication Date: 2017-06-27
INST OF ELECTRONICS CHINESE ACAD OF SCI
View PDF13 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This structure is difficult to obtain better mode matc

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor laser side-coupled axial pumped alkali metal laser
  • Semiconductor laser side-coupled axial pumped alkali metal laser
  • Semiconductor laser side-coupled axial pumped alkali metal laser

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0044] Example 1

[0045] Such as Figure 4 As shown, this embodiment proposes an alkali metal laser with a semiconductor laser side coupled axially pumped, which includes 3 semiconductor pump sources 1, an alkali metal vapor chamber 2 and a resonant cavity, and also includes 3 steering elements 5. The three steering elements 5 correspond to the three semiconductor pump sources 1 one-to-one, which are used to change the propagation direction of the pump light emitted by the three semiconductor pump sources; the pump light emitted by the three semiconductor pump sources is in the alkali metal The vapor chamber 2 finally has paraxial light.

[0046] Among them, the resonant cavity includes a reflector 3 and an output coupling mirror 4. The alkali metal vapor chamber 2 is placed between the reflector 3 and the output coupling mirror 4; the three turning elements 5 adopt a fully reflective concave mirror with a hole in the center. , The diameter of the center hole is greater than the ...

Example Embodiment

[0048] Example 2

[0049] Such as Figure 5 As shown, this embodiment proposes an alkali metal laser with a semiconductor laser side coupled axially pumped, which includes 5 semiconductor pump sources 1, 1 alkali metal vapor chamber 2 and a resonant cavity, and also includes 5 steering elements 5. The 5 steering elements 5 correspond to the 5 semiconductor pump sources 1 one-to-one, and are used to change the propagation direction of the pump light emitted by the 5 semiconductor pump sources; the pump light emitted by the 5 semiconductor pump sources is in the alkali metal The vapor chamber 2 finally has paraxial light.

[0050] Among them, the resonant cavity includes a reflecting mirror 3 and an output coupling mirror 4. The alkali metal vapor chamber 2 is placed between the reflecting mirror 3 and the output coupling mirror 4; the five turning elements 5 adopt a full-reflective concave mirror with a hole in the center. , The diameter of the center hole is larger than the size o...

Example Embodiment

[0052] Example 3

[0053] Such as Image 6 As shown, this embodiment proposes an alkali metal laser with a semiconductor laser side coupled axially pumped, which includes 4 semiconductor pump sources 1, an alkali metal vapor chamber 2 and a resonant cavity, and also includes 4 steering elements 5. The 4 steering elements 5 correspond to the 4 semiconductor pump sources 1 one-to-one, and are used to change the propagation direction of the pump light emitted by the 4 semiconductor pump sources respectively; the pump light emitted by the 4 semiconductor pump sources is in the alkali metal The vapor chamber 2 finally has paraxial light. .

[0054] Wherein, the resonant cavity includes a reflecting mirror 3 and an output coupling mirror 4. The alkali metal vapor chamber is placed between the reflecting mirror 3 and the output coupling mirror 4; the four turning elements 5 adopt a fully reflective concave mirror with a hole in the center, The diameter of the central hole is larger than...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

Disclosed is a semiconductor laser side-coupled axial pumped alkali metal laser, including n semiconductor pump sources, m alkali metal vapor chambers and a resonant cavity. The alkali metal laser further comprises n steering elements corresponding to the n semiconductor pump sources respectively for changing the propagation direction of the pump light emitted by the n semiconductor pump sources. Regardless of how the n steering elements are set, the pump light emitted by the n semiconductor pump sources is ultimately paraxial light in the m alkali metal vapor chambers, where n and m are natural numbers. The pump light emitted from the n semiconductor pump sources is changed in the propagation direction by the corresponding steering elements, and converging points are located at different positions in the alkali metal vapor chambers. According to the invention, the alkali metal laser realizes the large focal depth by the side coupling of multiple semiconductor laser pump modules and makes full use of the alkali metal vapor atoms in the alkali metal vapor chambers to achieve better pattern matching, thus realizing the cascade use of the multiple pump modules and achieving high power output.

Description

technical field [0001] The invention belongs to the technical field of lasers, and more specifically relates to an alkali metal laser with side-coupled axial pumping of a semiconductor laser. Background technique [0002] DPAL (Diode Pumped Alkali Vapor Laser) is a new type of optically pumped gas laser whose gain medium is alkali metal in vapor state. The temperature of the gain medium is usually 100-200°C. The gain medium of DPAL is mainly potassium, rubidium or cesium in the vapor state, and its energy level structure is as follows: figure 1 shown. n is the number of electron layers where the outermost electrons are located, and the n corresponding to K, Rb, and Cs are 4, 5, and 6, respectively. wxya 1 / 2 is the ground state energy level, nP 1 / 2 and nP 3 / 2 Excited state energy levels resulting from splitting for outermost electron spin-orbit interactions. The transitions from the ground state to the two upper energy levels correspond to the D1 and D2 lines, respectiv...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01S3/03H01S3/091H01S3/227
CPCH01S3/031H01S3/091H01S3/227
Inventor 谭荣清黄伟李志永
Owner INST OF ELECTRONICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap