Method for transferring graphene based on sublimation method

A graphene, graphene surface technology, applied in the field of graphene, can solve the problems of PMMA can not be completely removed, affect the performance of graphene, limit the application of graphene, etc., to improve the quality and transfer efficiency, short transfer cycle, easy to operate. Effect

Active Publication Date: 2017-06-30
PEKING UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, it is necessary to use a large amount of organic solvents such as acetone to dissolve and remove the PMMA support layer, which leads to increased costs and is not environmentally friendly. At the same time, the treatment process of organic solvents limits the application of graphene in the field of organic and organic-inorganic composite materials.
In addition, there is usually the problem that PMMA cannot be completely removed by this method, and the residual glue of PMMA will seriously affect the performance of graphene. The PMMA residual glue can be reduced by annealing, but it brings serious P-type doping problems (Lin Y C, et al.Graphene annealing:how clean can it be?[J].Nano letters,2011,12(1):414-419.), and the annealing treatment also limits the application of graphene in the field of non-high temperature resistant materials

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] (1) Formation of support layer: heat naphthalene to 120°C in a beaker, place the copper foil with graphene on top of the beaker and keep it for 20s, naphthalene desublimates on the surface of graphene to form a dense support layer, and the resulting structure is Naphthalene / graphene / copper foil;

[0028] (2) Etching of the initial substrate: configure 1mol / L ferric chloride etching solution, place the naphthalene / graphene / copper foil on the surface of the etching solution, with the naphthalene layer facing up, and wait until the copper foil is completely etched, and then place the Naphthalene / graphene is transferred to deionized water for rinsing, and the resulting structure is naphthalene / graphene;

[0029] (3) Combination of support layer / graphene and target substrate: transfer the rinsed naphthalene / graphene to a silicon wafer (300nm SiO2) covered with 300nm silicon dioxide 2 / Si) substrate, the resulting structure is naphthalene / graphene / 300nm SiO 2 / Si;

[0030]...

Embodiment 2

[0033] The main difference from Example 1 is that the easily sublimable substance is replaced by camphor, and it can also be replaced by other easily sublimable substances.

[0034] (1) Formation of the support layer: heat the camphor to 200°C in a beaker, place the copper foil with graphene on the top of the beaker and keep it for 50s, the camphor will desublimate on the surface of the graphene to form a dense support layer, and the resulting structure is Camphor / graphene / copper foil;

[0035] (2) Etching of the initial substrate: configure 1.5mol / L ferric chloride etching solution, place the camphor / graphene / copper foil on the surface of the etching solution, with the camphor layer facing up, wait until the copper foil is completely etched, and then Camphor / graphene is transferred to deionized water for rinsing, and the resulting structure is camphor / graphene;

[0036] (3) Combination of support layer / graphene with target substrate: transfer the rinsed camphor / graphene to a...

Embodiment 3

[0039] The main difference from Embodiment 1 is that proper heating of the target substrate can speed up the sublimation of the support layer and further shorten the transfer time.

[0040] (1) Formation of support layer: heat naphthalene to 120°C in a beaker, place the copper foil with graphene growing on the top of the beaker and keep it for 30s, naphthalene desublimates on the surface of graphene to form a dense support layer, and the resulting structure is Naphthalene / graphene / copper foil;

[0041] (2) Etching of the initial substrate: configure 2mol / L ferric chloride etching solution, place the naphthalene / graphene / copper foil on the surface of the etching solution, with the naphthalene layer facing up, and wait until the copper foil is completely etched, and then place the Naphthalene / graphene is transferred to deionized water for rinsing, and the resulting structure is naphthalene / graphene;

[0042] (3) Combination of support layer / graphene and target substrate: transfer...

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PUM

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Abstract

The invention discloses a method for transferring graphene. According to the method, a substance which is easily sublimated is utilized as a supporting layer for transferring the graphene; first, through heating the substance which is easily sublimated, the substance is desublimated to form a compact supporting layer on the surface of the graphene growing on an initial matrix, then, the initial matrix is removed and the graphene / supporting layer is transferred to a target substrate, and afterwards, the supporting layer is sublimated. In comparison with adhesive residue problems existing in existing PMMA (Polymethyl Methacrylate) method and PDMS (Polydimethylsiloxane) method and problems that a hot padding method and a heat release adhesive tape method have relative high requirements on the flatness and the adhesiveness of the target substrate, and the like, according to the method, the substance which is easily sublimated is used as the supporting layer; the transfer process is simpler, more convenient and quicker; the large-area, damage-free and adhesive-residue-free transfer of the graphene to any target substrate can be realized; the application of the graphene to the fields of flexible electronics, organic nanoelectronics, organic solar cells, organic sensor aspects, organic high-performance micro-nano electronic devices, organic-material energy storage and the like is greatly expanded.

Description

technical field [0001] The invention belongs to the technical field of graphene, in particular to a method for transferring graphene. Background technique [0002] Graphene is a two-dimensional regular hexagonal honeycomb crystal formed by densely packing a single layer of carbon atoms. It has many superior properties, such as high electron mobility, high light transmittance, high mechanical strength and so on. In the past few decades, a large number of studies have revealed the application potential of graphene in the fields of electronic devices, sensing and detection, biomedicine, and energy storage and energy conversion (Rao C NR, Gopalakrishnan K, Maitra U. Comparative study of potential applications of graphene ,MoS 2 , and other two-dimensional materials in energy devices, sensors, and related areas [J]. ACS Applied Materials & Interfaces, 2015, 7 (15): 7809-7832.). When preparing graphene-related composite materials or devices, it is usually necessary to transfer g...

Claims

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Application Information

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IPC IPC(8): C01B32/194
Inventor 邓玉豪王逸伦张晓伟戴伦马仁敏
Owner PEKING UNIV
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