High-power high-current ion source four-electrode support base component

An ion source and four-electrode technology, applied in electrical components, ion beam tubes, circuits, etc., can solve the problems of high cost and high dynamic pumping speed requirements of the pumping system, reduce the processing accuracy requirements, increase the area of ​​the pumping port, Ensuring uniform and consistent results

Active Publication Date: 2017-07-07
SOUTHWESTERN INST OF PHYSICS
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, the vacuum degree of the ion source electrode system depends on several factors such as the vacuum degassing rate of the electrode insulation and sealing materials, the intake air volume at the inlet of the electrode grid and the air extraction volume at the outlet. In order to maintain a low vacuum degree, the air extraction system The dynamic pumping speed requirements are relatively high. If multiple ion sources work at the same time, the pumping speed of the pumping system must reach hundreds of thousands of liters per second. The ultra-high-speed pumping system is very expensive.

Method used

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  • High-power high-current ion source four-electrode support base component
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  • High-power high-current ion source four-electrode support base component

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Embodiment Construction

[0027] The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments.

[0028] Taking the 80kV, 45A, 5s ion source electrode support assembly as an example, the specific implementation is given. The ion source electrode support assembly such as image 3As shown, the overall dimensions are 780mm in length, 506mm in width, and 318mm in height. It mainly consists of the first flange 1, the first insulating cavity 2, the second flange 3, the second insulating cavity 4, the third flange 5, the third insulating cavity 6, the fourth flange 7, the second electrode bracket 8, The third electrode support 9, the fourth electrode support 10 and other components are composed.

[0029] The first flange 1 is used to support the first electrode grid 11 and provide access for the water cooling circuit of the first electrode grid 11 . It cooperates with the first insulating chamber 2, the first electrode grid 11 and the...

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Abstract

The invention belongs to the technical field of high-power ion sources, and particularly relates to a high-power high-current ion source four-electrode support base component. The component mainly comprises four large electrode flanges, three electrode brackets with a plurality of slit structures, and three PEEK insulating cavities. One insulating cavity is arranged between every two flanges, and every two flanges and the corresponding insulating cavity constitute a vacuum sealed insulating cavity with two open ends in a matching manner through an O-shaped fluorine rubber sealing ring. According to the electrode grid support base component, after the four layers of electrode flanges, the insulating cavities and a support frame are assembled in a sealing manner through sealing rings, the parallelism of the four layers of support planes is corrected. The parallelism of the electrode support planes can be kept within 0.04mm. The assembly tolerance of multiple work pieces is reduced. The non-uniformity of field intensity between electrodes is reduced. The exhaust port area of an electrode system is increased. The vacuum degree between electrode grid layers is reduced. The probability of electric breakdown during extraction of a high-power ion source is reduced.

Description

technical field [0001] The invention belongs to the technical field of a high-power ion source, and in particular relates to a four-electrode support seat assembly of a high-power high-current ion source. Background technique [0002] The ion source is a device that ionizes neutral atoms or molecules, generates plasma, and draws an ion beam from it. It is an indispensable part of various types of ion accelerators, mass spectrometers, electromagnetic isotope separators, ion implanters, ion beam etching devices, ion thrusters, and neutral beam implanters in controlled fusion devices. An ion source generally consists mainly of a plasma generator and an electrode system. The beam energy range of the neutral beam implanter ion source used in the controlled nuclear fusion device is 40keV-1MeV, and the beam current intensity is generally in the range of tens of amperes. Therefore, the neutral beam ion source has a large volume and the beam extraction area Large and complex in str...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J27/02
CPCH01J27/02H01J27/022
Inventor 邹桂清曹建勇周博文余珮炫魏会领周红霞
Owner SOUTHWESTERN INST OF PHYSICS
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