Metal Oxide Half Field Effect Transistor Power Device with Bottom Gate

Abstract

A metal oxide semiconductor field-effect transistor power element with a bottom gate, comprising: a substrate of a first conductivity type; an epitaxial layer of a first conductivity type located on the substrate of the first conductivity type; a plurality of device grooves set up On the upper surface of the first conductive type epitaxial layer, each device trench has a bottom gate, a separation gate and a trench gate arranged from deep to shallow, wherein the bottom gate and the first conductive There is a bottom insulating layer between the epitaxial layers, an intermediate insulating layer between the bottom gate and the separation gate, and an upper insulating layer between the separation gate and the ditch gate.

Description

technical field [0001] The invention relates to a metal oxide half field effect transistor power element, and further relates to a metal oxide half field effect transistor power element with a bottom gate. Background technique [0002] Metal Oxide Semiconductor Field Effect Transistor Power Device (Metal Oxide Semiconductor Field Effect Transistor Power Device) is generally referred to as a power transistor (Power MOSFET). It is a field effect transistor that can be widely used in analog circuits and digital circuits. It has become a power device ( The mainstream of Power device) is often used in many power electronics applications. MOS field effect transistor power devices have very low on-resistance and extremely large gate input impedance, so the power dissipation at the input end is quite small. Furthermore, compared with the power bipolar transistor (Power Bipolar Transistor), the MOSFET power element only has a single carrier and does not have the disadvantage of mino...

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Problems solved by technology

However, as the device density increases, the charge between the gate and the drain (Qgd) will increase, which will slow down the charging and discharging speed of the gate and affect the performance of the device.

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