Ultraviolet avalanche photodiode detector with drift channel and its detection method

Abstract

The invention discloses an ultraviolet avalanche photodiode detector with a drift channel, each device unit of the detector includes CE electrodes, SiO 2 layer, N‑CHANNEL, P‑well or N‑well, substrate and backside electrodes; CE electrodes embedded in SiO 2 The center of the layer; P‑well or N‑well consists of two parts symmetrically arranged on the left and right sides of the device unit; N‑CHANNEL is located on the SiO 2 Below the layer, above the two parts of P‑well or N‑well; the upper center of N‑CHANNEL is provided with a dotted avalanche diode, which is electrically connected to the CE electrode; SiO 2 An inner drift ring, an outer drift ring, and a ground GND are sequentially arranged on the layer from the inside to the outside, and the ground GND is electrically connected to the P-well or the N-well. The detector of the present application ensures a large-area photodetection area while the avalanche multiplication high-field area is relatively small, which improves the quantum efficiency; reducing the area of ​​the avalanche area helps to reduce dark current and dark excitation, while improving the quality of the wafer And the tolerance of defects is improved, which prevents the early breakdown of the large-area avalanche multiplying high field region at the defect position.

Description

technical field [0001] The invention belongs to the field of H01L 27 / 00 semiconductor devices, and in particular relates to an ultraviolet avalanche photodiode detector with a drift channel and a detection method thereof. Background technique [0002] Avalanche Photodiode Detector (APD) for low light detection. The ultraviolet light detector with "solar blindness" characteristic made of third-generation wide-bandgap semiconductor materials (such as SiC, GaN, etc.) can work at high temperature without expensive and bulky refrigeration system, and is resistant to radiation High near-UV response. Because of its excellent characteristics in aerospace, astronomical exploration and military affairs, it has always been a research hotspot. [0003] Compared with traditional photomultiplier tubes, ultraviolet APD has the advantages of single photon response, large gain, insensitivity to magnetic field, simple manufacturing process, low cost, small size, easy CMOS process integratio...

AI Technical Summary

Problems solved by technology

There are no literature reports or practical applications of this structure for SiC UV detectors

Images