Metal growth method based on single atomic layer deposition
A single atomic layer and growth method technology, which is applied in the direction of metal material coating process, coating, gaseous chemical plating, etc., can solve problems such as device instability, resistivity increase, work function drift, etc., to improve device reliability properties, the effect of reducing resistivity
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[0033] In order to make the purposes, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments It is only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.
[0034] In the prior art, single-layer deposition (ALD) forms a single-layer deposition thin film by alternately passing gas-phase precursors into a reaction chamber and depositing them on a substrate for chemical adsorption. The surface reaction of ALD has chemisorption self-limiting (CS) and sequential reaction sel...
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