Carbon nitride/(040) crystal face bismuth vanadate hetero-junction and preparation method and application thereof

A technology of face bismuth vanadate and carbon nitride, which is applied in the field of g-C3N4/crystal face BiVO4 heterojunction and its preparation, can solve the problems of no patent and literature report g-C, no report on method work, etc. Catalytic properties, favorable for efficient separation and migration, developmental integrity

Active Publication Date: 2017-08-18
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] So far, the preparation of g-C by ultrasonic method 3 N 4 /(040) crystal plane BiVO 4 The methodological work of the complex

Method used

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  • Carbon nitride/(040) crystal face bismuth vanadate hetero-junction and preparation method and application thereof
  • Carbon nitride/(040) crystal face bismuth vanadate hetero-junction and preparation method and application thereof
  • Carbon nitride/(040) crystal face bismuth vanadate hetero-junction and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Step 1, 6mmoL Bi(NO 3 ) 3 ·5H 2 O dissolves in 1mol / L HNO at a uniform and slow speed under stirring 3 solution, stirred for 30min and slowly added 6mmoL NH 4 VO 3 , stirred for 60min to form precursor solution A, Bi in precursor solution A 3+ The concentration is 0.2mol / L;

[0035] Step 2, Precursor solution A was hydrothermally reacted at 80°C for 15 hours to prepare (040) crystal plane BiVO 4 Precipitate, the precipitate was washed with alcohol and water, and then dried at 70°C for 9 hours to obtain (040) crystal plane BiVO 4 Powder;

[0036] Step 3, CO(NH 2 ) 2 Raise the temperature to 550°C at a rate of 10°C / min, and calcine for 3 hours to obtain g-C 3 N 4 Powder;

[0037] Step 4, under stirring condition, the g-C prepared 3 N 4 Dissolve the powder in deionized water, stir until g-C 3 N 4 The color of the solution becomes light, and until it is uniform, g-C with a concentration of 0.02g / mL is obtained. 3 N 4 solution;

[0038] Step 5, under magne...

Embodiment 2

[0041] Step 1, 6mmoL Bi(NO 3 ) 3 ·5H 2 O dissolves in 1.8mol / L HNO at a uniform and slow speed under stirring conditions 3 solution, stirred for 30min and slowly added 6mmoL NH 4 VO 3 , stirred for 55min to form precursor solution A, Bi in precursor solution A 3+ The concentration is 0.18mol / L;

[0042] Step 2, Precursor solution A was hydrothermally reacted at 78°C for 13.5h to prepare (040) crystal plane BiVO 4 Precipitate, the precipitate was washed with alcohol and water, and then dried at 72°C for 9 hours to obtain (040) crystal plane BiVO 4 Powder;

[0043] Step 3, CO(NH 2 ) 2 Raise the temperature to 530°C at a rate of 10.5°C / min, and calcine for 4 hours to obtain g-C 3 N 4 Powder;

[0044] Step 4, under stirring condition, the g-C prepared 3 N 4 Dissolve the powder in deionized water, stir until g-C 3 N 4 The color of the solution becomes light until it is uniform, and g-C with a concentration of 0.025g / mL is obtained 3 N 4 solution;

[0045] Step 5,...

Embodiment 3

[0048] Step 1, 6mmoL Bi(NO 3 ) 3 ·5H 2 O dissolves in 1.2mol / L HNO at a uniform and slow speed under stirring 3 solution, stirred for 30min and slowly added 6mmoL NH 4 VO 3 , stirred for 75min to form precursor solution A, Bi in precursor solution A 3+ The concentration is 0.22mol / L;

[0049] Step 2, Precursor solution A was hydrothermally reacted at 82°C for 14.5h to prepare (040) crystal plane BiVO 4 Precipitate, the precipitate was washed with alcohol and water, and then dried at 68°C for 9 hours to obtain (040) crystal plane BiVO 4 Powder;

[0050] Step 3, CO(NH 2 ) 2 Rise to 540°C at a heating rate of 9.5°C / min, and calcined for 3.5h to obtain g-C 3 N 4 Powder;

[0051] Step 4, under stirring condition, the g-C prepared 3 N 4 Dissolve the powder in deionized water, stir until g-C 3 N 4 The color of the solution becomes light until it is uniform, and g-C with a concentration of 0.015g / mL is obtained 3 N 4 solution;

[0052] Step 5, under magnetic stirrin...

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Abstract

The invention discloses a carbon nitride/(040) crystal face bismuth vanadate hetero-junction and a preparation method and application thereof. The method comprises the following steps: synthesizing (040) crystal face BiVO4 powder through a hydrothermal method, and calcining to obtain g-C3N4 powder; dissolving the prepared (040) crystal face BiVO4 powder in a g-C3N4 water solution which is dispersed uniformly under ultrasonic waves; stirring to obtain a precursor solution; performing an ultrasonic reaction on the precursor solution at the normal temperature to obtain a g-C3N4/(040) crystal face BiVO4 hetero-junction photo-catalyst. The two phases of g-C3N4 and (040) crystal face BiVO4 coexist after compounding; moreover, the two phases grow together, and keep respective growth trends; the hetero-junction is formed between the g-C3N4 and the (040) crystal face BiVO4, and the g-C3N4 is matched with the (040) crystal face BiVO4 in energy level, so that separation of photo-induced electrons and holes is facilitated, the light response range of the (040) crystal face BiVO4 is expanded, and the separation rate of photo-induced carriers is increased, thereby improving the photo-catalyzing performance of the (040) crystal face BiVO4 under visible light.

Description

technical field [0001] The invention belongs to the field of functional materials and relates to a g-C 3 N 4 / (040) crystal plane BiVO 4 Heterojunctions and their preparation methods and applications. Background technique [0002] BiVO 4 There are three main crystal structures, namely tetragonal scheelite structure, monoclinic scheelite structure and tetragonal zirconite structure. The tetragonal phase mainly has absorption bands in the ultraviolet region, while the monoclinic BiVO 4 In addition to the absorption band in the ultraviolet region, there are also obvious absorption bands in the visible region. Monoclinic BiVO 4 The absorption in the ultraviolet region is mainly formed by the transition of electrons from O2p orbital to V3d orbital, while the monoclinic phase BiVO 4 The absorption band in the visible region is mainly generated by electrons transitioning from Bi6s orbitals or hybrid orbitals of Bi6s and O2p to V3d orbitals. The band gap of monoclinic bismut...

Claims

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Application Information

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IPC IPC(8): B01J27/24C02F1/30C02F101/38
CPCB01J27/24B01J35/004C02F1/30C02F2101/38C02F2305/10
Inventor 谈国强王颖赵程程任慧君夏傲
Owner SHAANXI UNIV OF SCI & TECH
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