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A kind of purification method and application of silicon tetrachloride

A technology of silicon tetrachloride and chlorine compounds, applied in silicon halide compounds, chemical instruments and methods, silicon, etc., can solve problems such as difficult separation of methyl silane and influence on process stability, and achieve easy separation and strong polarity , the effect of high boiling point

Active Publication Date: 2018-08-07
ASIA SILICON QINGHAI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The carbon impurities in the reduction raw materials will be transformed into methylsilane under high temperature conditions in the reduction furnace. The boiling point of methylsilane is similar to that of silicon tetrachloride, and methylsilane will form an azeotrope with silicon tetrachloride, so it is difficult to separate by conventional methods. Method for the separation of methylsilane from silicon tetrachloride
Silicon tetrachloride with low purity will affect the stability of subsequent processes

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] A method for purifying silicon tetrachloride in this embodiment includes the following steps.

[0043] S1, plasma step:

[0044] will contain traces of Cl 2 , SiCl(CH 3 ) 3 Silicon tetrachloride and other impurities are passed into the plasma device with a complexing agent, and the electrodes of the plasma device are provided with high-purity quartz as a dielectric, and a trace amount of Cl 2 into highly reactive chlorine radicals, and SiCl(CH 3 ) 3 Impurities react to form SiCl 2 (CH 3 ) 2 、SiCl 3 CH 3 、SiCl 4 , SiCl(CH 2 Cl) 3 , SiCl(CHCl 2 ) 3 and other chlorine-containing compounds.

[0045] S2, separation step:

[0046] The chlorine-containing compound reacts with the complexing agent in the plasma generator to form a stable complex, which is separated from silicon tetrachloride to obtain purified silicon tetrachloride.

[0047] The purified silicon tetrachloride can continue to be used in the production of polysilicon.

Embodiment 2

[0049] A method for purifying silicon tetrachloride in this embodiment includes the following steps.

[0050] S1, plasma step:

[0051] will contain traces of Cl 2 , SiCl(CH 3 ) 3 Silicon tetrachloride and other impurities are passed into the plasma device with a complexing agent, and the electrodes of the plasma device are provided with high-purity alumina as a dielectric, and a trace amount of Cl 2 into highly reactive chlorine radicals, and SiCl(CH 3 ) 3 Impurities react to form SiCl 2 (CH 3 ) 2 、SiCl 3 CH 3 、SiCl 4 , SiCl(CH 2 Cl) 3 , SiCl(CHCl 2 ) 3 and other chlorine-containing compounds.

[0052] S2, separation step:

[0053] The chlorine-containing compound reacts with the complexing agent in the plasma generator to form a stable complex, which is separated from silicon tetrachloride to obtain purified silicon tetrachloride.

[0054] The purified silicon tetrachloride can continue to be used in the production of polysilicon.

Embodiment 3

[0056] A method for purifying silicon tetrachloride in this embodiment includes the following steps.

[0057] S1, plasma step:

[0058] will contain trace amounts of Cl 2 , SiCl(CH 3 ) 3 Silicon tetrachloride and other impurities are passed into the plasma device, and the electrodes of the plasma device are provided with high-purity quartz as a dielectric, and a trace amount of Cl 2 into highly reactive chlorine radicals, and SiCl(CH 3 ) 3 Impurities react to form SiCl 2 (CH 3 ) 2 、SiCl 3 CH 3 、SiCl 4 , SiCl(CH 2 Cl) 3 , SiCl(CHCl 2 ) 3 and other chlorine-containing compounds.

[0059] S2, separation step:

[0060] Pass silicon tetrachloride containing chlorine compounds into a liquefaction device at a temperature of 58° C., and liquefy the chlorine compounds under normal pressure, thereby separating them from silicon tetrachloride to obtain purified silicon tetrachloride.

[0061] The purified silicon tetrachloride can continue to be used in the production of...

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Abstract

Relating to the technical field of tail gas purification in polycrystalline silicon production, the invention discloses a purification method of silicon tetrachloride and application thereof. The purification method of silicon tetrachloride is mainly used for purifying silicon tetrachloride obtained in polycrystalline silicon production, includes an ionization step: introducing silicon tetrachloride containing Cl2 and carbon-containing impurities into a plasma generator to activate Cl2 so as to obtain chlorine free radicals, and reacting the chlorine free radicals with carbon-containing impurities so as to obtain a chlorine-containing compound. The method also includes a separation step: separating the chlorine-containing compound from silicon tetrachloride. The method can be applied to polycrystalline silicon production, and the purification method of silicon tetrachloride provided by the invention can well remove carbon-containing impurities from silicon tetrachloride.

Description

technical field [0001] The invention relates to the technical field of tail gas purification in polysilicon production, in particular to a method for purifying silicon tetrachloride and its application. Background technique [0002] Polysilicon is a basic key functional material for new industries such as integrated circuits, aerospace, and new energy. Although my country's polysilicon industry has developed rapidly in recent years, and its production capacity has leapt to the first in the world, it is still unable to achieve mass production of high-purity and ultra-high-purity polysilicon. It is my country's priority to develop high-purity and ultra-high-purity polysilicon material production technology and realize large-scale production. The key direction of polysilicon industry development. [0003] The deep purification technology of silicon tetrachloride in polysilicon production is the key technology for producing polysilicon materials. When trichlorosilane and hydrog...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B33/107C01B33/03
CPCC01B33/03C01B33/10794
Inventor 宗冰张宝顺王体虎
Owner ASIA SILICON QINGHAI