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CdS (cadmium sulfide)/CdTe (cadmium telluride) heterojunction nanorod and preparation method thereof

A nanorod and heterojunction technology, applied in the field of nanomaterials, can solve problems such as photoelectric effect and electroluminescent devices that have not yet appeared, and achieve the effect of fast photon transport

Inactive Publication Date: 2017-08-22
苏州市皎朝纳米科技有限公司
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  • Summary
  • Abstract
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Problems solved by technology

[0006] However, at present, with the development of semiconductors, there are already many devices that can produce photoelectric effect, and there are also many devices that can produce electroluminescence. Devices that simultaneously generate photoelectric effect and electroluminescence

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] Below in conjunction with embodiment the present invention will be further described.

[0023] 1. Dissolve 0.128 g of CdO powder and 0.668 g of n-octadecanyl phosphate in 2 g of tri-n-octylphosphine oxide (TOPO);

[0024] 2. Degas at 150°C for 30 minutes, then heat to 370°C under nitrogen atmosphere to generate Cd-ODPA complex;

[0025] 3. Dissolve 16 mg of S in 1.5 ml of trioctyl (TOP), mix well, and quickly inject it into the product of step 2 at 370°C;

[0026] 4. Stir at 330°C for 20 minutes;

[0027] 5. Cool the reaction mixture to 250°C;

[0028] 6. Dissolve 20 mg of tellurium in 1 ml of TOP; then slowly add to the mixture from step 5;

[0029] 7. After 10 minutes, the reaction mixture was cooled to room temperature, and the obtained cadmium sulfide / cadmium telluride nanorods were precipitated and then dissolved in 4 ml of chloroform;

[0030] 8. Mix 6 ml of octadecene, 1.13 g of oleic acid and 0.184 g of zinc acetate, degas at 150°C for 30 minutes, then stir ...

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Abstract

The invention discloses a CdS (cadmium sulfide) / CdTe (cadmium telluride) nanorod. The heterojunction simultaneously has the functions of photoelectric effect and electroluminescence, wherein the crystal diameter of CdS and CdTe is within 15 nanometers. The invention also discloses a preparation method of the device.

Description

technical field [0001] The invention relates to the field of nanomaterials, in particular to a heterojunction nanorod and a preparation method thereof. Background technique [0002] In recent years, the preparation of new high-power LED devices has become a research hotspot. People keep coming up with new structures to achieve the set goals. In the past decade, people have carried out a lot of research work in the field of nanomaterial light-emitting devices. Chinese invention patent CN 103423673A discloses a full-spectrum LED light source module for LCD backlight, including LCD panel and LED backlight; the components of LCD panel are polarizer, upper glass substrate, Color filter, alignment film, liquid crystal unit, TFT substrate, lower glass substrate, polarizer; LED backlight includes phosphor light conversion plate, diffusion plate, light guide plate, reflector, LED chip; phosphor light conversion plate includes matrix material, Phosphor. The LED chip array is place...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G11/02C01B19/04B82Y30/00B82Y40/00
CPCC01G11/02C01B19/007C01P2004/16C01P2004/64
Inventor 不公告发明人
Owner 苏州市皎朝纳米科技有限公司
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