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A quaternary electrical storage device, its preparation method and quaternary storage material

An electrical storage, quaternary technology, applied in static memory, digital memory information, electrical components and other directions, can solve the problems of information explosion, quaternary electrical storage device reports are rare, etc., to achieve extended life, mature device manufacturing technology, The effect of stable device performance

Active Publication Date: 2019-08-13
SUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] In recent years, with the development of information technology, traditional memory has almost reached its limit, unable to meet the ever-increasing demand for information explosion, resistive switch random access memory (RRAM) has gradually attracted basic industrial interest
The development of organic electrical storage has greatly expanded the information storage carrier. With the gradual deepening of the research on organic electrical storage devices, scientists are not only satisfied with the realization of binary storage devices, but gradually turn their attention to multi-ary storage devices; but So far, there are few reports on quaternary electrical memory devices

Method used

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  • A quaternary electrical storage device, its preparation method and quaternary storage material
  • A quaternary electrical storage device, its preparation method and quaternary storage material
  • A quaternary electrical storage device, its preparation method and quaternary storage material

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Synthetic example

[0039] Synthesis example Preparation of organic matter

[0040] Squaric acid (1.00 g, 8.76 mmol) and 4-butylaniline (2.61 g, 17.52 mmol) in n-butanol / toluene (40 mL, 1 / 1 in vol). The mixture was refluxed for 12 hours; the precipitate obtained was collected by filtration and washed with chloroform and hexane to a pale yellow solid which was the product (SA), and its structural formula was:

[0041] .

Embodiment 1

[0042] Embodiment 1: preparation is based on the ITO glass substrate of PEDOT:PSS modification organic electrical memory device

[0043] The electric storage sandwich device is divided into three layers, from bottom to top are PEDOT:PSS modified ITO glass layer, organic film layer, aluminum electrode, and its scanning electron microscope picture is as follows figure 1 As shown, the organic film layer is 100 nanometers thick, and the aluminum electrode thickness is 100 nanometers.

[0044] (1) Clean the ITO glass indium tin oxide with deionized water, ethanol, and acetone sequentially in ultrasonic;

[0045] (2) The polymer solution of PEDOT:PSS is modified onto the ITO substrate by spin coating, and the spin is limited to control the film thickness of the modified layer;

[0046] (3) Evaporate the organic matter (at 5×10 -6 Under the Pa vacuum condition, the evaporation rate is 2 A / s) on the surface of the ITO glass, and then evaporate the aluminum electrode on it.

[0047...

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Abstract

The invention discloses a quaternary electric storage device, a preparation method thereof and a quaternary storage material. The electric storage device includes a substrate, an organic film and an electrode; the substrate is a polymer of 3,4-ethylenedioxythiophene and a quaternary storage material. ITO glass modified with a blend of polystyrene sulfonic acid. The quaternary organic electrical storage device provided by the invention has low turn-on voltage and high device yield; the modified electrical storage device of the present invention breaks through the traditional secondary storage, and can realize organic quaternary storage unexpectedly, realizing Yes, "0", "1", "2" and "3" quaternary data storage avoids the difficult problem of realizing organic multi-ary system through molecular synthesis and structure, which provides a simple and efficient method for realizing multi-ary system It is an effective strategy and has high application value for the future storage field.

Description

technical field [0001] The invention belongs to the technical field of organic semiconductor materials, and in particular relates to a quaternary electric storage device, a preparation method thereof and a quaternary storage material. Background technique [0002] In recent years, with the development of information technology, traditional memory has almost reached its limit, unable to meet the ever-increasing demands of the information explosion, and resistive-switch random-access memory (RRAM) has gradually attracted fundamental industrial interest. The development of organic electrical storage has greatly expanded the information storage carrier. With the gradual deepening of the research on organic electrical storage devices, scientists are not only satisfied with the realization of binary storage devices, but gradually turn their attention to multi-ary storage devices; but So far, reports on quaternary electrical storage devices are rare. Contents of the invention ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00G11C11/56C07C251/20
CPCG11C11/5664C07C251/20H10N70/20H10N70/881H10N70/021
Inventor 路建美贺竞辉
Owner SUZHOU UNIV
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