Preparation method of low-cost and high-density ITO target material

A high-density, low-cost technology, applied in metal material coating process, ion implantation plating, coating, etc., can solve the problems of high cost and unfavorable mass production, and achieve high density and uniform grain size distribution , the effect of low resistivity

Active Publication Date: 2017-09-05
ANHUI TUOJITAI NOVEL CERAMIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the cold isostatic pressing first and then the hot isostatic pressing process can make the relative density of the ITO target as high as 99%, but the cost is high, which is not conducive to large-scale industrial production

Method used

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  • Preparation method of low-cost and high-density ITO target material

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] This embodiment provides a low-cost, high-density ITO target preparation method, including the following steps:

[0024] (1) Preparation of premixed liquid: add dispersant and adhesive into water, stir evenly, adjust the pH to 10 with ammonia water to obtain premixed liquid; the added amount of dispersant is 0.25% of the mass of ITO powder, The addition amount is 1% of the mass of the ITO powder, and the addition amount of water is 15% of the mass of the ITO powder; the dispersant is a mixture of citric acid and polyacrylamide in a weight ratio of 1-2:1;

[0025] (2) Preparation of suspension slurry: add ITO powder prepared by chemical co-precipitation method and sintering agent to the premix, and then ball mill in a ball mill. After ball milling, the mixed slurry is obtained, stirred and vacuumed to remove the slurry. The bubbles; the sintering agent consists of rare earth oxides, titanium nitride and nano-GeO 2 Composition; the rare earth oxide is CeO 2 , Y 2 O 3 Or Dy 2 O...

Embodiment 2

[0032] This embodiment provides a low-cost, high-density ITO target preparation method, including the following steps:

[0033] (1) Preparation of premixed liquid: add dispersant and adhesive into water, stir evenly, adjust pH to 8 with ammonia water to obtain premixed liquid; the added amount of dispersant is 0.3% of the mass of ITO powder, The addition amount is 0.3% of the mass of the ITO powder, and the addition amount of water is 20% of the mass of the ITO powder; the dispersant is a mixture of citric acid and polyacrylamide in a weight ratio of 1-2:1;

[0034] (2) Preparation of suspension slurry: add ITO powder prepared by chemical co-precipitation method and sintering agent to the premix, and then ball mill in a ball mill. After ball milling, the mixed slurry is obtained, stirred and vacuumed to remove the slurry. The bubbles; the sintering agent consists of rare earth oxides, titanium nitride and nano-GeO 2 Composition; the rare earth oxide is CeO 2 , Y 2 O 3 Or Dy 2 O 3 T...

Embodiment 3

[0041] This embodiment provides a low-cost, high-density ITO target preparation method, including the following steps:

[0042] (1) Preparation of premixed liquid: add dispersant and adhesive into water, stir evenly, adjust the pH to 11 with ammonia water to obtain premixed liquid; the added amount of dispersant is 0.2% of the mass of ITO powder, The addition amount is 2% of the mass of the ITO powder, and the addition amount of water is 10% of the mass of the ITO powder; the dispersant is a mixture of citric acid and polyacrylamide in a weight ratio of 1-2:1;

[0043] (2) Preparation of suspension slurry: add ITO powder prepared by chemical co-precipitation method and sintering agent to the premix, and then ball mill in a ball mill. After ball milling, the mixed slurry is obtained, stirred and vacuumed to remove the slurry. The bubbles; the sintering agent consists of rare earth oxides, titanium nitride and nano-GeO 2 Composition; the rare earth oxide is CeO 2 , Y 2 O 3 Or Dy 2 O ...

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Abstract

The invention discloses a preparation method of a low-cost and high-density ITO target material. The preparation method comprises the following steps that a dispersing agent and an adhesive are added into water and stirred evenly, the pH value is adjusted to be 8-11 with ammonium hydroxide, and a pre-mixed solution is obtained; the weight ratio of the dispersing agent to a mixture of citric acid and polyacrylamide is 1-2:1; ITO powder prepared through a chemical co-precipitation method and a sintering agent are added into the pre-mixed solution, then the pre-mixed solution is subjected to ball milling in a ball mill, mixed slurry is obtained after ball milling and stirred, and bubbles in the slurry are removed through vacuumizing; the sintering agent is composed of rare earth oxide, titanium nitride and nano GeO2; an aluminum mold is installed on a gypsum board, and the obtained slurry is poured into the aluminum mold; demolding and drying are conducted after the slurry is absorbed and molded, and an ITO blank is obtained; and the dried ITO blank is sintered in the normal-pressure pure oxygen atmosphere, and the ITO target material is obtained. Compared with the prior art, the product obtained through the preparation method is high in density, low in cost, low in electrical resistivity and uniform in grain dimension distribution.

Description

Technical field [0001] The invention relates to the technical field of preparation of functional ceramics, in particular to a method for preparing a high-density ITO target material. Background technique [0002] ITO thin film can be prepared by magnetron sputtering with ITO target. In industrial production, magnetron sputtering is mostly used to sputter the ITO target on the glass into a very thin transparent conductive film (thickness about 100nm) ), the thin film is etched to prepare electrode materials for flat panel displays. [0003] To prepare high-quality ITO film, an ITO target with good uniformity and high density must be used. This is because there are many holes in the low-density target, and uncertain elements in the holes also enter the ITO film during the sputtering process, thereby affecting the conductivity of the ITO film. In addition, the low-density ITO target surface is prone to produce some blackened low-valent oxides during the sputtering process, which is ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/08C04B35/01C04B35/622C04B35/64
CPCC04B35/01C04B35/622C04B35/64C04B2235/3224C04B2235/3287C04B2235/3886C04B2235/6022C04B2235/6567C04B2235/6583C04B2235/77C04B2235/95C04B2235/96C23C14/086C23C14/3414
Inventor 张天舒宋晓超蒋卫国钱邦正
Owner ANHUI TUOJITAI NOVEL CERAMIC TECH
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