Plasma cavity and precleaning equipment for physical vapor deposition

Abstract

The invention provides a plasma cavity and precleaning equipment for physical vapor deposition. The plasma cavity comprises a cavity body, a plasma generator and a base arranged in the cavity body for supporting machined workpieces, and further comprises a plasma adjusting device arranged above the base; when a process is performed, a sheath layer is formed on the surface of the plasma adjusting device; and part of ions in an area with high ion density in plasmas are neutralized as neutral particles by electrons in the sheath layer, so that the density of the ions reaching in the plasmas on the surface of the machined workpieces is uniform. The precleaning equipment for physical vapor deposition comprises the plasma cavity. The density of the plasmas in the plasma cavity and the precleaning equipment is uniformly distributed, so that the machining quality of the machined workpieces is high.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing, and in particular relates to a plasma chamber and pre-cleaning equipment for physical vapor deposition. Background technique [0002] Plasma technology is widely used in semiconductor manufacturing process, such as deposition process, etching process and so on. Plasma is generated by passing reactive gas into the reaction chamber and introducing electron flow, using an external electric field (DC / AC) to accelerate the electrons, and colliding with the reactive gas to ionize the reactive gas. [0003] Capacitively coupled plasma processing equipment and inductively coupled plasma processing equipment are two typical plasma processing equipment. In the production process, in order to be able to independently control the density of the plasma and the energy of the particles in the plasma, relevant technical personnel have combined inductive coupling and capacitive coupling plasma processi...

AI Technical Summary

Problems solved by technology

[0005] The invention provides a plasma chamber. A plasma regulating device is arranged in the plasma chamber, which solves the technical problem of uneven distribution of plasma density on the surface of the processed workpiece in the prior art, so that the edge of the processed workpiece Uniform processing rates at the center and center, thereby improving the processing quality of the plasma chamber

Images