Low-surface tension acid etching solution for AMOLED (Active Matrix/Organic Light Emitting Diode) and preparation process thereof

Abstract

The invention discloses a low-surface tension acid etching solution for an AMOLED (Active Matrix / Organic Light Emitting Diode). The low-surface tension acid etching solution is prepared from the following raw materials according to weight percent: 23 to 25% of nitric acid, 11 to 13% of hydrochloric acid, 7 to 9% of acetic acid, 1.2 to 1.8% of inorganic salt chloride, 8.5 to 9.4% of ammonium fluoride, 11.2 to 14.5% of surfactant, 5 to 8% of additives and deionized water. Compared with the prior art, the ammonium fluoride and appropriate additives are added to the etching solution, and any metal ion or negative ion is not introduced, so that no residue exists on the surface of an oxidation layer after etching, lower surface tension can be applied to the etching solution, and the permeability of the etching solution is increased; the surfactant has high surface activity and hydrophobic and oleophobic properties, so that compared with the same amount of other surfactants, the surface tension of the solution can be greatly reduced, therefore, the consumption is low, and the production cost is low.

Description

technical field [0001] The invention relates to the technical field of etching solution, in particular to an acidic etching solution with low surface tension for AMOLED and a preparation process thereof. Background technique [0002] There are a large number of thin films and thin layers on the AMOLED substrate, so in order to prevent undesired electrical short circuits between them, it is preferable to evenly incline the cut-off side of the etched substrate, that is, the etching profile, and the lower part is wider than the upper part, forming a blunt cone. shape. This is because the difference in height between the formed two or more thin film layers decreases when the etching profile is in the blunt tapered shape. Etching methods include dry etching using gas and wet etching using etching liquid. Although wet etching has disadvantages, the equipment investment cost required for the process is low, and the etching environment does not need to be maintained in a high vacuu...

AI Technical Summary

Problems solved by technology

The existing etching solution has complex components. Compared with the main components of nitric acid and ammonium fluoride, the amount of surfactant activity is relatively large, and the production cost is high; in addition, when the concentration of nitric acid and ammonium fluoride in the etching solution is high, generally non-ionic Surfactants are difficult to dissolve, cannot adjust the surface tension of the etching solution, and have relatively weak permeability, making it difficult to etch into very small pores