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Ultrathin and semitransparent thin film solar cell and preparation method thereof

A technology of solar cells and transparent conductive films, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as poor interface contact between the passivation layer and the back electrode, affecting battery performance, etc., to eliminate surface dangling bonds and reduce short circuits The effect of reducing the current density and increasing the transmittance

Active Publication Date: 2017-09-19
PEKING UNIV SHENZHEN GRADUATE SCHOOL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the work function of CdTe material is as high as 5.5eV, conventional metal electrodes cannot match it. In order to obtain a good ohmic contact, acid is used to etch the surface of CdTe to form rich Te in the process, which is convenient for p-type doping, but the excess Te after doping becomes Surface dangling bonds affect battery performance
The passivation layer can eliminate the surface dangling bonds, but it still faces the problem of poor interface contact between the passivation layer and the back electrode

Method used

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  • Ultrathin and semitransparent thin film solar cell and preparation method thereof
  • Ultrathin and semitransparent thin film solar cell and preparation method thereof
  • Ultrathin and semitransparent thin film solar cell and preparation method thereof

Examples

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Effect test

Embodiment 1

[0038] The ultra-thin translucent thin-film solar cell of this example, such as figure 1 As shown, it consists of a glass substrate 1 , a transparent conductive film layer 2 , an N-type transition layer 3 , a light absorbing layer 4 , a passivation layer 5 and a back electrode 6 stacked in sequence. The passivation layer 5 is a copper-doped semiconductor layer; the back electrode 6 is an NTO conductive film, that is, a niobium-doped titanium oxide layer; the light-absorbing layer in this example is a CdTe film. Wherein, the copper-doped semiconductor layer is formed by doping copper in the precursor thin film layer, that is, the precursor thin film layer 51 is deposited on the light absorbing layer 4, and the Cu film 52 is deposited on the precursor thin film layer 51, and then annealed to make the copper doped In the precursor thin film layer 51, form the passivation layer 5 of copper-doped semiconductor layer, and the precursor thin film layer is aluminum oxide layer, alumin...

Embodiment 2

[0047] The structure of the ultra-thin translucent thin-film solar cell of this example is the same as that of Example 1, and the thickness and specific preparation method of each layer are as follows:

[0048] First, use the sputtering method to prepare a transparent conductive layer FTO with a thickness of 200nm-1000nm on the glass substrate, and sputter an N-type transition layer CdS with a thickness of 50-300nm on the transparent conductive layer FTO. In this example, a 200nm Transparent conductive layer FTO and 50nm N-type transition layer CdS; use near-vacuum evaporation to deposit CSS on the surface of N-type transition layer CdS to prepare a p-type CdTe light-absorbing layer with a thickness of 600nm; then, sequentially carry out CdCl 2 Annealing treatment, nitric acid phosphoric acid NP etching, the film with a certain amount of dangling bonds on the surface is obtained. Among them, sputtering, near-vacuum evaporation, CdCl 2 The annealing treatment and nitric acid p...

Embodiment 3

[0055] The structure of the ultra-thin translucent thin-film solar cell of this example is the same as that of Example 1, and the thickness and specific preparation method of each layer are as follows:

[0056] First, use the sputtering method to prepare a transparent conductive layer FTO with a thickness of 200nm-1000nm on the glass substrate, and sputter an N-type transition layer CdS with a thickness of 50-300nm on the transparent conductive layer FTO. In this example, a 1000nm Transparent conductive layer FTO and 300nm N-type transition layer CdS; use near-vacuum evaporation to deposit CSS on the surface of N-type transition layer CdS to prepare a p-type CdTe light-absorbing layer with a thickness of 800nm; then, sequentially carry out CdCl 2 Annealing treatment, nitric acid phosphoric acid NP etching, the film with a certain amount of dangling bonds on the surface is obtained.

[0057] Then, on the surface of the CdTe light-absorbing layer, Al 2 o 3 layer, the atomic la...

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Abstract

The present invention discloses an ultrathin and semitransparent thin film solar cell and a preparation method thereof. The ultrathin and semitransparent thin film solar cell comprises a glass substrate, a transparent conductive thin layer, an N-type transition layer, a light-absorption layer, a passivation layer and a back electrode which are overlapped in order; the passivation layer is a copper-doping semiconductor layer, the back electrode is an NTO conductive film, and the light-absorption layer is a CdTe film, a CdSe film, a CdZnTe film, a CdSeTe film, a CdMgTe film, a CuGaSe2 film, a CuInSe2 film or a Cu2ZnSnS2 film. The ultrathin and semitransparent thin film solar cell employs the copper-doping semiconductor layer as the passivation layer to effectively eliminate the surface dangling bond of the light-absorption layer; the ultrathin and semitransparent thin film solar cell is in good contact with the interface of the back electrode so as to improve the short circuit current density of the cell; and moreover, the visible light transmittance of the cell can reach more than 10% and the photoelectric conversion efficiency is high through the passivation layer tunneling and rectification effect.

Description

technical field [0001] The present application relates to the field of thin-film solar cells, in particular to an ultra-thin translucent thin-film solar cell and a preparation method thereof. Background technique [0002] Thin-film solar cells are the main representative of the second-generation solar cells. Thin-film semiconductor materials, such as cadmium telluride, are used as the light-absorbing layer, and the thickness is on the order of microns and sub-microns, which greatly reduces the consumption of materials. The growth process is simple and easy to manufacture. , bendable devices, cost-effective advantages, good prospects for industrialization. Translucent cadmium telluride thin-film solar cells can be used in daily life such as architectural glass and car window glass, which further broadens the application range of thin-film solar cells; however, there are still no semi-transparent thin-film solar cells on the market. In addition, there are many defects in semi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/0216H01L31/0392H01L31/0445H01L31/18
CPCH01L31/02167H01L31/022425H01L31/03925H01L31/0445H01L31/1836Y02E10/50Y02P70/50
Inventor 梁军杨晓杨闵煜鑫潘锋
Owner PEKING UNIV SHENZHEN GRADUATE SCHOOL
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