A kind of copper indium gallium selenide thin film solar cell metal electrode exposure method

Abstract

The invention provides a CIGS (copper indium gallium selenium) film solar cell metal electrode exposure method. The CIGS film solar cell metal electrode exposure method is characterized in that the cell assembly includes a backboard light transmission substrate layer, a nontransparent conductive metal layer, a film photoelectric conversion layer, a transparent conductive oxide layer, an encapsulated layer and a front board light transmission substrate layer, wherein the backboard light transmission substrate layer, the nontransparent conductive metal layer, the film photoelectric conversion layer, the transparent conductive oxide layer, the encapsulated layer and the front board light transmission substrate layer are successively arranged from bottom to top in the vertical direction; and the CIGS film solar cell metal electrode exposure method is operated through coordination between a laser and a scanning galvanometer, uses the laser with certain wavelength to perform scanning irradiation on the position requiring exposure of electrode, and utilizes the principle that different film layers have different absorption degree of laser to achieve the aim of peeling off the film photoelectric conversion layer and the transparent conductive oxide layer and maintaining the nontransparent conductive metal layer. The CIGS film solar cell metal electrode exposure method is stable and reliable in process, and enables the metal bus bar to directly contact the metal electrode, and can reduce the internal resistance of the film solar cell to realize higher conversion efficiency.

Description

technical field [0001] The invention belongs to the field of solar cells, and in particular relates to a method for exposing a metal electrode of a copper indium gallium selenium thin film solar cell. Background technique [0002] At present, most light-transmitting thin-film solar cell modules on the market use a metal scraper scraping method to remove the thin-film photoelectric conversion layer and transparent conductive oxide layer to expose the metal electrodes. Using the above-mentioned mechanical method for electrode exposure requires extremely high flatness of the scraper blade, requires regular maintenance and replacement of the scraper, and tends to leave thin film photoelectric conversion layers and transparent conductive oxide layers, which cannot achieve good results and stability. , Mechanical contact can easily cause scratches on metal electrodes, affecting the stability of solar cells. Contents of the invention [0003] The technical problem to be solved b...

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Problems solved by technology

[0003] The technical problem to be solved by the present invention is: Aiming at the existing traditional technical problems, a new method for exposing metal electrodes of copper indium gallium selenium thin film solar cells is proposed

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