A kind of preparation method of gan horizontal nanowire electronic device

Abstract

The invention discloses a manufacturing method of a GaN horizontal nanowire electronic device. The manufacturing method comprises the steps of: directly growing horizontal GaN nanowires on a substrate, preparing a square electrode array by adopting a photolithography technology, and depositing SiO2 with the thickness of 2250 angstroms by means of PECVD equipment; depositing platinum on the top part of one nanowire deposited with SiO2 by adopting an FIB technology, and leading out the platinum to be connected to another square electrode. According to the manufacturing method, the horizontal GaN nanowires are directly grown on the substrate, the adhesiveness of the horizontal GaN nanowires and the substrate is high, a nanowire-structure ultraviolet detector is integrated with a nanorwire field effect transistor, and the nanowires do not need to be transferred, thus the performance stabilitiy of the device is enhanced, the material defects are reduced, the device size is reduced, and the scope of application is widened. The manufacturing method of the GaN horizontal nanowire electronic device can be widely applied in the field of microelectronics.

Description

technical field [0001] The invention relates to the field of microelectronics, in particular to a method for preparing a GaN horizontal nanowire electronic device. Background technique [0002] Field effect transistor is a basic device in the field of microelectronics, and metal oxide semiconductor field effect transistor is a field effect transistor that can be widely used in analog circuits and digital circuits. It has always been the goal pursued by the development of microelectronics industry to increase the working speed and integration of chips and reduce the power consumption density of chips by reducing the size of transistors. In the past few decades, the development of microelectronics industry has been following Moore's Law. At present, the physical gate length of field-effect transistors is close to ten nanometers, and the gate dielectric is only a few layers thick of oxygen atoms. It is difficult to improve performance by reducing the size of traditional field-...

AI Technical Summary

Problems solved by technology

Compared with solid-state detectors, vacuum devices have disadvantages such as large volume and high operating voltage; while silicon devices have the characteristics of visible light response, which will become a disadvantage in some ultraviolet applications

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