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GeSb/SiO2 multilayer phase change thin film material, preparation method and application

A thin film material and phase change technology, applied in the field of microelectronics, can solve the problems of high power consumption and poor thermal stability, achieve low power consumption and improve thermal stability

Inactive Publication Date: 2017-09-22
JIANGSU UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In order to solve the defects of poor thermal stability and high power consumption in the prior art, the present invention provides a GeSb / SiO 2 Multilayer phase change thin film material, preparation method and application

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  • GeSb/SiO2 multilayer phase change thin film material, preparation method and application
  • GeSb/SiO2 multilayer phase change thin film material, preparation method and application
  • GeSb/SiO2 multilayer phase change thin film material, preparation method and application

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preparation example Construction

[0032] The preparation steps of this embodiment are:

[0033] S1, cleaning SiO 2 / Si(100) substrate, clean the surface and back, remove dust particles, organic and inorganic impurities;

[0034] S10. Strong ultrasonic cleaning in acetone solution for 3-5 minutes, rinse with deionized water;

[0035] S11. Strong ultrasonic cleaning in ethanol solution for 3-5 minutes, rinse with deionized water, and dry the surface and back with high-purity N2;

[0036] S12. Dry the water vapor in an oven at 120℃ for about 20 minutes;

[0037] S2, using magnetron sputtering method to prepare [GeSb(a) / SiO 2 (b)] x Preparation before multilayer composite film;

[0038] S20, install GeSb and SiO 2 Sputtering targets, the purity of the target materials reaches 99.999% (atomic percentage), and the background vacuum is pumped to 1×10 -4 Pa;

[0039] S21. Set the sputtering power to 30W;

[0040] S22. Use high-purity Ar as the sputtering gas (volume percentage reaches 99.999%), set the Ar gas flow to 30SCCM, and a...

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Abstract

The invention provides a GeSb / SiO2 multilayer phase change thin film material, a preparation method and application. The thin film material comprises a GeSb thin film and a SiO2 thin film which are arranged alternatively. Compared with the prior art, the GeSb / SiO2 multilayer compound phase change thin film material is formed by alternatively sputtering and depositing a GeSb layer and a SiO2 layer and compounding the GeSb layer and the SiO2 layer on the nano scale, so that the thermal stability of the product is improved, and the material has relatively low power consumption.

Description

Technical field [0001] The invention belongs to the field of microelectronics technology, and specifically relates to a GeSb / SiO 2 Multilayer phase change film material, preparation method and application. Background technique [0002] There are a variety of semiconductor storage technologies, including conventional volatile storage technologies (such as SRAM and DRAM) and non-volatile storage technologies (such as EEPROM and Flash). Although these technologies have met a series of applications, there is no ideal, silicon-based semiconductor process that can be used for mass production, so that its storage performance has the high capacity and low cost of DRAM, the high speed of SRAM, and flash memory. The data is non-volatile, but also has high reliability, low operating voltage, and low power consumption. Phase change memory (PCRAM) is a chalcogenide film-based random access memory. It shows obvious advantages in terms of large capacity, high density, high speed, low power con...

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Application Information

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IPC IPC(8): H01L45/00
CPCH10N70/881H10N70/021H10N70/026H10N70/8833
Inventor 胡益丰尤海鹏朱小芹邹华袁丽张剑豪孙月梅薛建忠吴世臣吴卫华郑龙翟良君
Owner JIANGSU UNIV OF TECH