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Low-voltage low-power high-gain narrow-band low noise amplifier

A low-noise amplifier and low-power technology, applied in the direction of low-noise amplifiers, amplifiers, amplifier types, etc., can solve problems such as low linearity, poor isolation, and poor robustness, and achieve high gain, high isolation, The effect of reducing the noise figure of the circuit

Inactive Publication Date: 2017-10-10
SOUTHEAST UNIV
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Problems solved by technology

[0011] The purpose of the present invention is to provide a low Low voltage, low power consumption, high gain, narrowband low noise amplifier, which can reduce the power consumption and noise of the amplifier and improve the gain and isolation of the amplifier on the basis of ensuring the circuit performance

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  • Low-voltage low-power high-gain narrow-band low noise amplifier
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  • Low-voltage low-power high-gain narrow-band low noise amplifier

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Embodiment Construction

[0029] see image 3 , the present invention is provided with an input main common gate amplifying unit 1 , a choke unit 2 , a transconductance enhanced common gate amplifying unit 3 , and a load unit 4 . The differential radio frequency input signal Vin+ and Vin- are respectively connected to the input terminal of the main common gate amplifier unit 1 and the output terminal of the choke unit 2, and the output terminal of the input main common gate amplifier unit 1 is connected to the transconductance enhanced common gate amplifier unit 3 The input terminal and the output terminal of the transconductance-enhanced common-gate amplifying unit 3 are connected to the load unit 4, and the load unit 4 outputs differential radio frequency output signals Vout+ and Vout-.

[0030] see Figure 4 , the input main cascode amplifier unit 1 adopts a two-way differential common gate structure, and at the same time, the transconductance enhanced common gate amplifier unit 3 and the input mai...

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Abstract

A low-voltage low-power high-gain narrow-band low noise amplifier is provided with an input main common gate amplifier unit, a choke unit, a transconductance enhancement common gate amplifier unit and a load unit, wherein the input main common gate amplifier unit adopts a two-path differential common gate structure, and meanwhile, the transconductance enhancement common gate amplifier unit and the input main common gate amplifier unit form a parallel structure at a signal input end to achieve 50-Ohm input impedance matching of the low noise amplifier together; the choke unit provides a DC channel to the ground, and chokes input AC signals; and RF input signals are sent to the load unit through the input main common gate amplifier unit and the transconductance enhancement common gate amplifier unit, and amplified voltage differential signals are finally output.

Description

technical field [0001] The invention relates to a low-noise amplifier in a radio-frequency receiver system, especially a low-voltage, low-power, high-gain, narrow-band low-noise amplifier, which adopts CMOS technology and has great advantages in radio frequency circuits. The design structure is simple and the noise performance is improved. At the same time as the gain, the power consumption is greatly reduced, it has high gain and good input matching, and has a small noise figure, and is suitable for low-cost, low-voltage, low-power communication systems. Background technique [0002] The low noise amplifier is the first stage active circuit in the radio frequency receiving chain, which itself should have a low noise figure and provide enough gain to suppress the noise of the subsequent stage circuit. An essential building block for almost all RF receiver systems is the Low Noise Amplifier. Since the amplitude of the radio frequency signal received by the system is usually ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F3/45
CPCH03F3/45183H03F2200/294H03F2203/45024
Inventor 李智群罗磊王曾祺程国枭王欢
Owner SOUTHEAST UNIV
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