Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for improving performance of transparent conducting thin film of metal nanowire through solvent evaporating and annealing process

A technology of transparent conductive films and metal nanowires, which is applied in the direction of metal/alloy conductors, circuits, electrical components, etc., can solve the problems of high cost, complicated processing methods, unfavorable processing and preparation of transparent conductive films, etc., and achieve low cost, square Effect of reduced resistance and simple process

Active Publication Date: 2017-10-17
SOUTH CHINA NORMAL UNIVERSITY
View PDF4 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these processing methods are generally complicated or costly
[0004] Usually, the ligand PVP layer on the surface of metal nanowires and the surface of metal nanowires are bound together by weak van der Waals force. Generally, some PVP is removed by repeated washing and centrifugation with polar solvents, and the removal of too much PVP will lead to the dispersion of AgNWs. Difficult, not conducive to solution processing to prepare transparent conductive films

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for improving performance of transparent conducting thin film of metal nanowire through solvent evaporating and annealing process
  • Method for improving performance of transparent conducting thin film of metal nanowire through solvent evaporating and annealing process
  • Method for improving performance of transparent conducting thin film of metal nanowire through solvent evaporating and annealing process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] A method for solvent evaporation and annealing to enhance the performance of metal nanowire transparent conductive films, comprising the steps of:

[0035] (1) Use isopropanol as a solvent to make silver nanowires into a silver nanowire solution with a mass fraction of 1%. After shaking well, carry out vacuum suction filtration with microporous filter membrane, obtain the dispersion liquid of silver nanowire isopropanol which is uniformly dispersed and has no obvious agglomeration;

[0036] (2) Carry out the following steps to clean the glass substrate in turn: 10 minutes of ultrasonic cleaning of lotion, 10 minutes of ultrasonication of acetone, 10 minutes of ultrasonication of deionized water, and 10 minutes of ultrasonication of isopropanol, and dry it for use;

[0037] (3) Clean the glass with oxygen plasma, and then spin-coat the dispersion of silver nanowires in isopropanol on the glass substrate at a spin-coating speed of 2500 r / min for 60 s. The bottom surface ...

Embodiment 2

[0042] A method for solvent evaporation and annealing to enhance the performance of metal nanowire transparent conductive films, comprising the steps of:

[0043] (1) Using ethanol as a solvent, make silver nanowires into a silver nanowire solution with a mass fraction of 0.01%. The particle size of silver nanowires is 10-50 μm in length and 20-80 nm in diameter, and shake well with a shaker Finally, carry out vacuum suction filtration with microporous filter membrane, obtain the dispersion liquid of the silver nanowire ethanol that is uniformly dispersed and has no obvious agglomeration;

[0044] (2) Carry out the following steps to clean the glass substrate in turn: 10 minutes of ultrasonic cleaning of lotion, 10 minutes of ultrasonication of acetone, 10 minutes of ultrasonication of deionized water, and 10 minutes of ultrasonication of isopropanol, and dry it for use;

[0045] (3) Clean the glass with oxygen plasma, and then spin-coat the silver nanowire ethanol dispersion ...

Embodiment 3

[0050] A method for solvent evaporation and annealing to enhance the performance of metal nanowire transparent conductive films, comprising the steps of:

[0051] (1) Using methanol as a solvent, make silver nanowires into a silver nanowire solution with a mass fraction of 3%. The particle size of silver nanowires is 10-50 μm in length and 20-80 nm in diameter, and shake well with a shaker Finally, carry out vacuum suction filtration with microporous filter membrane, obtain the dispersion liquid of the silver nanowire methanol of uniform dispersion and no obvious agglomeration;

[0052] (2) Carry out the following steps to clean the glass substrate in turn: 10 minutes of ultrasonic cleaning of lotion, 10 minutes of ultrasonication of acetone, 10 minutes of ultrasonication of deionized water, and 10 minutes of ultrasonication of isopropanol, and dry it for use;

[0053] (3) Clean the glass with oxygen plasma, and then spin-coat the methanol dispersion of silver nanowires on the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
transmittivityaaaaaaaaaa
transmittivityaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for improving the performance of a transparent conducting thin film of a metal nanowire through the solvent evaporating and annealing process. According to the method, the surface ligands PVP of a metal nanowire are generally soluble in a polar solvent. Through the evaporating and annealing process of alcoholic solvents low in boiling point, the surface ligands PVP of the metal nanowire are removed. Meanwhile, the contact resistance between metal nanowires is reduced, so that the square resistance of the transparent conducting thin film of the metal nanowire is reduced. The above method is simple in technological process and low in cost. Through adjusting the evaporating and annealing time of a solvent, the contact resistance between metal nano-wires is adjusted. Therefore, the square resistance of the transparent conducting thin film of the metal nanowire is adjusted and controlled. The processed transparent conducting thin film of the metal nanowire is reduced by 8% to 50% in square resistance compared with the untreated and initial transparent conducting thin film of the metal nanowire.

Description

technical field [0001] The invention relates to the technical field of preparation of transparent conductive films for photoelectric devices, in particular to a method for enhancing the performance of metal nanowire transparent conductive films by solvent evaporation and annealing. technical background [0002] With the continuous and rapid development of the modern optoelectronic industry, transparent conductive films have been applied in many aspects of social life in recent years, and have entered people's daily life. Transparent conductive films are mainly used in optoelectronic devices such as flat panel displays, e-books, smart phones, smart glass, touch screens, light-emitting diodes, and solar cells. At present, the materials widely used to make transparent conductive films are doped metal oxides, such as tin-doped indium oxide (ITO), aluminum-doped zinc oxide (AZO) and fluorine-doped tin oxide (FTO). Wait. Although the current commercialized ITO, AZO, and FTO tran...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01B13/00H01B1/02
CPCH01B1/02H01B13/0016
Inventor 章勇周永田魏优钟远聪
Owner SOUTH CHINA NORMAL UNIVERSITY