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Method for growing monocrystal diamond based on heteroepitaxy

A technology of single crystal diamond and heterogeneous epitaxy, which is applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve the problems of limited size, large lattice mismatch, and expensive diamond substrate, so as to reduce the production cost , the effect of excellent characteristics

Inactive Publication Date: 2017-10-20
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the traditional diamond grows single crystal diamond by homoepitaxial method. This method of growing single crystal diamond needs to use diamond as the epitaxial substrate. The diamond substrate is expensive and limited in size, which is not conducive to the large-scale application of diamond devices.
Heteroepitaxial growth remains challenging due to the large lattice mismatch between diamond and heteroepitaxial substrates

Method used

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  • Method for growing monocrystal diamond based on heteroepitaxy
  • Method for growing monocrystal diamond based on heteroepitaxy
  • Method for growing monocrystal diamond based on heteroepitaxy

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Experimental program
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Embodiment

[0039] Such as figure 1 Shown:

[0040] 1. Select MgO substrate as the heteroepitaxy substrate for growing diamond,

[0041] 2. Use acetone, alcohol, and deionized water to ultrasonically clean the MgO substrate for 5 minutes each, and then dry it with nitrogen;

[0042] 3. Use photolithography to make a strip substrate pattern: install the MgO substrate on the glue-spinning machine, drop photoresist on the surface of the MgO substrate, and then rotate at a constant speed through the glue-spinning machine to obtain uniform and defect-free light. Resist film; the photoresist is positive photoresist SUN-110P; the rotating speed of the glue machine is 2000 rpm-3000 rpm; the MgO substrate of the photoresist film is pre-baked: the sample is placed On a heating table at 90-110°C, bake for 85-95s; by pre-baking the solvent in the photoresist film, the pollution of dust to the photoresist film is reduced, and at the same time, due to the high-speed rotation of the photoresist film, ...

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Abstract

The invention discloses a method for growing monocrystal diamond based on heteroepitaxy. The method comprises the following steps: a first iridium metal layer is grown on a heteroepitaxy substrate, a first diamond layer is grown on the first iridium metal layer by taking the first iridium metal layer as a support; the grown first diamond layer and the first iridium metal layer are not influenced by crystal lattice mismatching, a graphical second iridium metal layer is grown on the first diamond layer, a second diamond layer is grown on the graphical second iridium metal layer, the second diamond layer and the second iridium metal layer are contacted with the first diamond layer for growth, at the same time, the second diamond layer is in a free growing state, the influence by the crystal lattice mismatching is not generated, the heteroepitaxy substrate having two diamond layers and two iridium metal layers are obtained, the second diamond layer is separated with the first diamond layer and the second iridium metal layer to obtain the monocrystal diamond, the heteroepitaxy substrate is taken as the support, the growth of the monocrystal diamond is carried out, the making cost of a diamond device is reduced, and the excellent characteristics of the diamond can be better performed.

Description

technical field [0001] The invention relates to single crystal diamond heteroepitaxy technology, in particular to a method for growing single crystal diamond based on heterogeneous epitaxy. Background technique [0002] Due to the excellent electrical and optical properties of single crystal diamond, it has broad application prospects in semiconductor devices such as high-power power electronic devices and high-frequency and high-power microwave devices. However, the traditional diamond grows single crystal diamond by the homoepitaxial method. This method of growing single crystal diamond requires diamond as the epitaxial substrate. The diamond substrate is expensive and limited in size, which is not conducive to the large-scale application of diamond devices. Heteroepitaxial growth remains challenging due to the large lattice mismatch between diamond and heteroepitaxial substrates. Contents of the invention [0003] The purpose of the present invention is to provide a me...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/18C30B29/04
CPCC30B25/183C30B29/04
Inventor 张景文陈旭东王进军李洁琼卜忍安王宏兴侯洵
Owner XI AN JIAOTONG UNIV
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