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Preparation method and device for doping semi-insulating gallium arsenide polycrystal with carbon

A preparation device, gallium arsenide technology, applied in the field of preparation of semi-insulating gallium arsenide polycrystalline carbon-doped, can solve the problems that the uniformity of crystal electrical properties is difficult to be guaranteed, it is difficult to control the concentration of C, and the cost is low , Reduce the crystallization rate, the effect of uniform carbon distribution

Pending Publication Date: 2017-10-20
JIANGXI DEYI SEMICON TECH
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

However, in the process of preparing semi-insulating gallium arsenide, it is difficult to control the C concentration, and it is difficult to ensure the uniformity of the electrical properties of the crystal.

Method used

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  • Preparation method and device for doping semi-insulating gallium arsenide polycrystal with carbon

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Embodiment

[0022] Such as figure 1 As shown, the preparation device of a semi-insulating gallium arsenide polycrystalline carbon doped in this embodiment includes a cylindrical heating device 1, one end of the heating device 1 is the source region 6, and the other end is the growth region 7, the heating device The controlled temperature of 1 increases gradually from the source region 6 to the growth region 7; the gradient range of the controlled temperature of the heating device 1 is 1200°C-1300°C. A quartz tube 2 is fixedly installed in the heating device 1, and a first PBN boat 3 for holding graphite powder and a first PBN boat 3 for holding Group III-IV chlorides are arranged adjacent to the position corresponding to the source area 6 in the quartz tube 2. , the second PBN boat 4 of fluoride or oxide, the position corresponding to the growth area in the quartz tube 2 is provided with a third PBN boat 5 for containing gallium arsenide polycrystal; the quartz tube 2 is a vacuum during t...

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Abstract

The invention discloses a preparation method and device for doping a semi-insulating gallium arsenide polycrystal with carbon. Physicochemical vapor transportation is realized by controlling the temperature distribution in a source area and a growth area, that is, a raw material undergoes a chemical reaction in the source are to form a gaseous substance, and the gaseous substance is physically transported into the gallium arsenide polycrystals under the action of an axial temperature gradient. The high resistance semi-insulating gallium arsenide polycrystal synthesized by the method is used for drawing a semi-insulating gallium arsenide monocrystal, and the drawn semi-insulating gallium arsenide monocrystal has the advantages of high resistivity, uniform carbon distribution and high electron mobility; the method has the advantages of avoiding the direct doping during the gallium arsenide monocrystal drawing process, and effective reduction of the crystal growth rate and the control difficulty of the C concentration and the C concentration distribution uniformity; and the device has the advantages of simplicity and low cost.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials, in particular to a preparation method and device for semi-insulating gallium arsenide polycrystalline carbon-doped. Background technique [0002] Gallium arsenide (GaAs) is an important semiconductor material belonging to III-V compounds, and it is a key basic material for making integrated circuits, power electronic devices, optoelectronic devices, and flexible solar cells. Semi-insulating gallium arsenide (SI-GaAs) is a gallium arsenide single crystal with a resistivity greater than 1×10^7Ω·cm. Gallium arsenide high-speed digital circuits, microwave monolithic circuits (MMICs), optoelectronic integrated circuits, low noise and high power field effect transistors based on semi-insulating gallium arsenide, with fast speed, high frequency, low power consumption and radiation resistance It is of great significance to national defense and economic construction. At the same time, du...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B31/08C30B31/10C30B31/12C30B29/42
CPCC30B29/42C30B31/08C30B31/10C30B31/12
Inventor 易德福守建川何军陈佳丽
Owner JIANGXI DEYI SEMICON TECH
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