OLED display substrate and manufacturing method thereof, and display device
A technology for display substrates and manufacturing methods, which is applied in photolithographic process exposure devices, photolithographic process coating equipment, semiconductor/solid-state device manufacturing, etc., can solve problems such as reducing the yield rate of OLED display substrates and affecting the performance of display substrates, achieving The effect of improving the yield rate
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Embodiment 1
[0085] In this embodiment, the isolation columns are formed first, and then the pattern of the pixel defining layer is formed. The manufacturing method of the OLED display substrate of this embodiment includes:
[0086] Step 1, providing a hard substrate 1, the hard substrate 1 can be a glass substrate or a quartz substrate;
[0087] Step 2, forming a flexible substrate 2 on the hard substrate 1, the flexible substrate 2 can be made of polyimide;
[0088] Step 3, forming a buffer layer 3 on the flexible substrate 2, the buffer layer 3 can be made of oxide, nitride or oxynitride;
[0089] Step 4, forming the pattern of the active layer 9 on the buffer layer 3;
[0090] Specifically, a layer of semiconductor material is deposited on the buffer layer 3, a layer of photoresist is coated on the semiconductor material, and a mask is used to expose the photoresist to form photoresist unretained regions and photoresist. Resist retention area, wherein, the photoresist retention area...
Embodiment 2
[0109] In this embodiment, the patterns of the isolation columns and the pixel defining layer are formed through one patterning process. The manufacturing method of the OLED display substrate of this embodiment includes:
[0110] Step 1, providing a hard substrate 1, the hard substrate 1 can be a glass substrate or a quartz substrate;
[0111] Step 2, forming a flexible substrate 2 on the hard substrate 1, the flexible substrate 2 can be made of polyimide;
[0112] Step 3, forming a buffer layer 3 on the flexible substrate 2, the buffer layer 3 can be made of oxide, nitride or oxynitride;
[0113] Step 4, forming the pattern of the active layer 9 on the buffer layer 3;
[0114] Specifically, a layer of semiconductor material is deposited on the buffer layer 3, a layer of photoresist is coated on the semiconductor material, and a mask is used to expose the photoresist to form photoresist unretained regions and photoresist. Resist retention area, wherein, the photoresist rete...
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