A method for manufacturing a compound semiconductor mim capacitor structure

Abstract

The invention discloses a manufacturing method of a compound semiconductor MIM (Metal Injection Molding) capacitor structure. The method comprises the following steps: performing insulating treatment on a compound semiconductor wafer, and depositing a polycrystalline silicon layer; depositing a rough polycrystalline silicon layer through the polycrystalline silicon layer under the oxidation action of diluted ammonia water; then, forming a lower polar plate of an MIM capacitor through a photolithographic process; forming a dielectric layer and an upper polar plate in sequence by depositing; and then making a metal connection line. Through deposition of rough polycrystalline silicon, an uneven structure is formed on the surface of the lower polar plate, and the effective area of the polar plate can be 1.5 to 2.5 times of a plane area, so that the capacitance value of the capacitor is increased effectively on the premise of not changing the overall floor area of the MIM capacitor, and the overall performance of the MIM capacitor is improved. Through adoption of the method, certain physical characteristics in a compound semiconductor are overcome, and an effective implementation mode is provided for the integrated circuit arrangement and performance improvement of the compound semiconductor.

Description

technical field [0001] The invention relates to semiconductor technology, in particular to a manufacturing method of a semiconductor MIM capacitance structure and the capacitance structure thereof. Background technique [0002] MIM capacitors are widely used as charge storage, coupling and filter devices, and their production is an important process link in the production process of semiconductor integrated circuits. A conventional MIM capacitor includes upper and lower electrode plates and a dielectric layer sandwiched between them, and the capacitance of the capacitor is proportional to the area of ​​the electrode plates. With the development of microelectronics technology, in order to improve the overall performance of semiconductor devices to achieve faster computing speed, larger data storage capacity and more functions, the capacity requirements of capacitors are increasing day by day. [0003] In order to increase the capacity of the capacitor, the prior art often ad...

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Problems solved by technology

[0003] In order to increase the capacity of the capacitor, the prior art often adopts the method of increasing the area of ​​the electrode plate of the capacitor, which obviously increases the area of ​​the integrated circuit occupied by the capacitor and restricts the miniaturization of the semiconductor device, resulting in a large circuit area and high cost. Therefore, the problem of reducing the area occupied by capacitors under the premise of ensuring performance is becoming more and more important

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